Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates

Lijuan Zhong; Fang Chen; Stephen A. Campbell; Wayne L. Gladfelter

Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates

Lijuan Zhong
, Fang Chen
, Stephen A. Campbell
, Wayne L. Gladfelter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO₂/SiO₂ films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250°C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	R.A. Potyrailo, A. Karim, Q. Wang, T. Chikyow
Pages	15-19
Number of pages	5
Volume	804
State	Published - 2003
Event	Combinatorial and Artificial Intelligence Methods in Materials Science II - Boston, MA., United States Duration: Dec 1 2003 → Dec 4 2003

Other

Other	Combinatorial and Artificial Intelligence Methods in Materials Science II
Country/Territory	United States
City	Boston, MA.
Period	12/1/03 → 12/4/03

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Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates. / Zhong, Lijuan; Chen, Fang; Campbell, Stephen A. et al.
Materials Research Society Symposium - Proceedings. ed. / R.A. Potyrailo; A. Karim; Q. Wang; T. Chikyow. Vol. 804 2003. p. 15-19.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhong, L, Chen, F, Campbell, SA & Gladfelter, WL 2003, Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates. in RA Potyrailo, A Karim, Q Wang & T Chikyow (eds), Materials Research Society Symposium - Proceedings. vol. 804, pp. 15-19, Combinatorial and Artificial Intelligence Methods in Materials Science II, Boston, MA., United States, 12/1/03.

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title = "Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates",

abstract = "A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250°C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.",

author = "Lijuan Zhong and Fang Chen and Campbell, \{Stephen A.\} and Gladfelter, \{Wayne L.\}",

year = "2003",

language = "English (US)",

volume = "804",

pages = "15--19",

editor = "R.A. Potyrailo and A. Karim and Q. Wang and T. Chikyow",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Combinatorial and Artificial Intelligence Methods in Materials Science II ; Conference date: 01-12-2003 Through 04-12-2003",

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TY - GEN

T1 - Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates

AU - Zhong, Lijuan

AU - Chen, Fang

AU - Campbell, Stephen A.

AU - Gladfelter, Wayne L.

PY - 2003

Y1 - 2003

N2 - A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250°C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

AB - A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250°C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

UR - https://www.scopus.com/pages/publications/2442532681

UR - https://www.scopus.com/pages/publications/2442532681#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:2442532681

VL - 804

SP - 15

EP - 19

BT - Materials Research Society Symposium - Proceedings

A2 - Potyrailo, R.A.

A2 - Karim, A.

A2 - Wang, Q.

A2 - Chikyow, T.

T2 - Combinatorial and Artificial Intelligence Methods in Materials Science II

Y2 - 1 December 2003 through 4 December 2003

ER -

Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates

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