Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates

Lijuan Zhong, Fang Chen, Stephen A. Campbell, Wayne L. Gladfelter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250°C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.A. Potyrailo, A. Karim, Q. Wang, T. Chikyow
Pages15-19
Number of pages5
Volume804
StatePublished - 2003
EventCombinatorial and Artificial Intelligence Methods in Materials Science II - Boston, MA., United States
Duration: Dec 1 2003Dec 4 2003

Other

OtherCombinatorial and Artificial Intelligence Methods in Materials Science II
CountryUnited States
CityBoston, MA.
Period12/1/0312/4/03

Fingerprint Dive into the research topics of 'Combinatorial chemical vapor deposition of metal silicate films using tri(t-butoxy) silanol and anhydrous metal nitrates'. Together they form a unique fingerprint.

Cite this