Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

Ryan C. Smith; Noel Hoilien; Jeff Roberts; Stephen A. Campbell; Wayne L. Gladfelter

doi:10.1021/cm011538m

Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

Ryan C. Smith
, Noel Hoilien
, Jeff Roberts
, Stephen A. Campbell
, Wayne L. Gladfelter

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO₃)₄, Sn(NO₃)₄, and Hf(NO₃)₄ allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

Original language	English (US)
Pages (from-to)	474-476
Number of pages	3
Journal	Chemistry of Materials
Volume	14
Issue number	2
DOIs	https://doi.org/10.1021/cm011538m
State	Published - 2002

Publisher link

10.1021/cm011538m

Find It

Find It at U of M Libraries

Cite this

@article{1b4453c085754389b670eb4e9c50abdf,

title = "Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates",

abstract = "Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.",

author = "Smith, \{Ryan C.\} and Noel Hoilien and Jeff Roberts and Campbell, \{Stephen A.\} and Gladfelter, \{Wayne L.\}",

year = "2002",

doi = "10.1021/cm011538m",

language = "English (US)",

volume = "14",

pages = "474--476",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

AU - Smith, Ryan C.

AU - Hoilien, Noel

AU - Roberts, Jeff

AU - Campbell, Stephen A.

AU - Gladfelter, Wayne L.

PY - 2002

Y1 - 2002

N2 - Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

AB - Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

UR - https://www.scopus.com/pages/publications/0036197924

UR - https://www.scopus.com/pages/publications/0036197924#tab=citedBy

U2 - 10.1021/cm011538m

DO - 10.1021/cm011538m

M3 - Article

AN - SCOPUS:0036197924

SN - 0897-4756

VL - 14

SP - 474

EP - 476

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 2

ER -

Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this