Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

Ryan C. Smith; Noel Hoilien; Jeff Roberts; Stephen A. Campbell; Wayne L. Gladfelter

doi:10.1021/cm011538m

Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

Ryan C. Smith, Noel Hoilien, Jeff Roberts, Stephen A. Campbell, Wayne L. Gladfelter

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Abstract

Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO₃)₄, Sn(NO₃)₄, and Hf(NO₃)₄ allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

Original language	English (US)
Pages (from-to)	474-476
Number of pages	3
Journal	Chemistry of Materials
Volume	14
Issue number	2
DOIs	https://doi.org/10.1021/cm011538m
State	Published - 2002

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10.1021/cm011538m

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title = "Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates",

abstract = "Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.",

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doi = "10.1021/cm011538m",

language = "English (US)",

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journal = "Chemistry of Materials",

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T1 - Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

AU - Smith, Ryan C.

AU - Hoilien, Noel

AU - Roberts, Jeff

AU - Campbell, Stephen A.

AU - Gladfelter, Wayne L.

PY - 2002

Y1 - 2002

N2 - Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

AB - Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

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Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

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