Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

Ryan C. Smith, Noel Hoilien, Jeff Roberts, Stephen A. Campbell, Wayne L. Gladfelter

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

Original languageEnglish (US)
Pages (from-to)474-476
Number of pages3
JournalChemistry of Materials
Volume14
Issue number2
DOIs
StatePublished - Mar 19 2002

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