Combinatorial chemical vapor deposition. Achieving compositional spreads of titanium, tin, and hafnium oxides by balancing reactor fluid dynamics and deposition kinetics

Ryan C. Smith, Noel Hoilien, Jimmy Chien, Stephen A. Campbell, Jeffrey T. Roberts, Wayne L. Gladfelter

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

A low-pressure chemical vapor deposition (CVD) reactor was modified to produce a continuous compositional spread of titanium, tin, and hafnium dioxides on a single Si(100) wafer. The corresponding anhydrous metal nitrates, Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4, were used as single-source precursors to the component oxides. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer an array of 100 μm x 100 μm capacitors was used to map the effective dielectric constant (Keff) of the films. For compositional spreads grown at 400 and 450 °C Keff reached a maximum value in regions with the highest concentrations of TiO2. The formation of the orthorhombic α-PbO2 phase for a composition near Hf0.75Sn0.25O2 was also observed in the 450 °C compositional spread.

Original languageEnglish (US)
Pages (from-to)292-298
Number of pages7
JournalChemistry of Materials
Volume15
Issue number1
DOIs
StatePublished - Jan 14 2003

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