TY - JOUR
T1 - Combinatorial chemical vapor deposition. Achieving compositional spreads of titanium, tin, and hafnium oxides by balancing reactor fluid dynamics and deposition kinetics
AU - Smith, Ryan C.
AU - Hoilien, Noel
AU - Chien, Jimmy
AU - Campbell, Stephen A.
AU - Roberts, Jeffrey T.
AU - Gladfelter, Wayne L.
PY - 2003/1/14
Y1 - 2003/1/14
N2 - A low-pressure chemical vapor deposition (CVD) reactor was modified to produce a continuous compositional spread of titanium, tin, and hafnium dioxides on a single Si(100) wafer. The corresponding anhydrous metal nitrates, Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4, were used as single-source precursors to the component oxides. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer an array of 100 μm x 100 μm capacitors was used to map the effective dielectric constant (Keff) of the films. For compositional spreads grown at 400 and 450 °C Keff reached a maximum value in regions with the highest concentrations of TiO2. The formation of the orthorhombic α-PbO2 phase for a composition near Hf0.75Sn0.25O2 was also observed in the 450 °C compositional spread.
AB - A low-pressure chemical vapor deposition (CVD) reactor was modified to produce a continuous compositional spread of titanium, tin, and hafnium dioxides on a single Si(100) wafer. The corresponding anhydrous metal nitrates, Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4, were used as single-source precursors to the component oxides. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer an array of 100 μm x 100 μm capacitors was used to map the effective dielectric constant (Keff) of the films. For compositional spreads grown at 400 and 450 °C Keff reached a maximum value in regions with the highest concentrations of TiO2. The formation of the orthorhombic α-PbO2 phase for a composition near Hf0.75Sn0.25O2 was also observed in the 450 °C compositional spread.
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U2 - 10.1021/cm020900+
DO - 10.1021/cm020900+
M3 - Article
AN - SCOPUS:0037435629
SN - 0897-4756
VL - 15
SP - 292
EP - 298
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 1
ER -