An AC measurement technique is applied to NMOS and PMOS devices fabricated using a 1. 25 mu m CMOS process. The parasitic resistance and mobility degradation coefficients have been extracted for temperatures between 25 K and 300 K. The NMOS parasitic resistance stays flat with temperature while the PMOS resistance rises sharply below 200 K, probably due to the light source/drain diffusion doping. The mobility reduction parameter theta , shows a clear 1/T behavior between 100 K and room temperature, with theta approaching unity for the PMOS devices. This may have serious implications for the performance of highly scaled devices which operate at high transverse electrical fields.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEE Proceedings I: Solid State and Electron Devices|
|State||Published - Jan 1 1988|