Circuit reliability: From physics to architectures: Embedded tutorial paper

Jianxin Fang; Saket Gupta; Sanjay V. Kumar; Sravan K. Marella; Vivek Mishra; Pingqiang Zhou; Sachin S. Sapatnekar

Circuit reliability: From physics to architectures: Embedded tutorial paper

Jianxin Fang, Saket Gupta, Sanjay V. Kumar, Sravan K. Marella, Vivek Mishra, Pingqiang Zhou, Sachin S. Sapatnekar

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys these effects, and discusses methods for mitigating them at all levels of design.

Original language	English (US)
Article number	6386616
Pages (from-to)	243-246
Number of pages	4
Journal	IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
State	Published - 2012
Event	2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012 - San Jose, CA, United States Duration: Nov 5 2012 → Nov 8 2012

Keywords

3D ICs
Bias temperature instability
electromigration
hot carriers
oxide breakdown
stress

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title = "Circuit reliability: From physics to architectures: Embedded tutorial paper",

abstract = "In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys these effects, and discusses methods for mitigating them at all levels of design.",

keywords = "3D ICs, Bias temperature instability, electromigration, hot carriers, oxide breakdown, stress",

author = "Jianxin Fang and Saket Gupta and Kumar, {Sanjay V.} and Marella, {Sravan K.} and Vivek Mishra and Pingqiang Zhou and Sapatnekar, {Sachin S.}",

year = "2012",

language = "English (US)",

pages = "243--246",

journal = "IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD",

issn = "1092-3152",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012 ; Conference date: 05-11-2012 Through 08-11-2012",

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T1 - Circuit reliability

T2 - 2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012

AU - Fang, Jianxin

AU - Gupta, Saket

AU - Kumar, Sanjay V.

AU - Marella, Sravan K.

AU - Mishra, Vivek

AU - Zhou, Pingqiang

AU - Sapatnekar, Sachin S.

PY - 2012

Y1 - 2012

N2 - In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys these effects, and discusses methods for mitigating them at all levels of design.

AB - In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys these effects, and discusses methods for mitigating them at all levels of design.

KW - 3D ICs

KW - Bias temperature instability

KW - electromigration

KW - hot carriers

KW - oxide breakdown

KW - stress

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M3 - Conference article

AN - SCOPUS:84872313116

SN - 1092-3152

SP - 243

EP - 246

JO - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

JF - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

M1 - 6386616

Y2 - 5 November 2012 through 8 November 2012

ER -

Circuit reliability: From physics to architectures: Embedded tutorial paper

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