Circuit reliability: From physics to architectures: Embedded tutorial paper

Jianxin Fang, Saket Gupta, Sanjay V. Kumar, Sravan K. Marella, Vivek Mishra, Pingqiang Zhou, Sachin S. Sapatnekar

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys these effects, and discusses methods for mitigating them at all levels of design.

Original languageEnglish (US)
Article number6386616
Pages (from-to)243-246
Number of pages4
JournalIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
StatePublished - 2012
Event2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012 - San Jose, CA, United States
Duration: Nov 5 2012Nov 8 2012

Keywords

  • 3D ICs
  • Bias temperature instability
  • electromigration
  • hot carriers
  • oxide breakdown
  • stress

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