Circuit-level characterization and loss modeling of SiC-based power electronic converters

Lakshmi Ravi, Eric L. Severson, Saurabh Tewari, Ned Mohan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

This paper presents the design, characterization, and modeling of a power electronic converter based around Silicon Carbide (SiC) MOSFETs. A practical characterization procedure is proposed which takes a circuit-level approach, as opposed to a device-level approach, using only the power electronic circuit and no additional test circuitry. The converter circuit is general enough that it can represent a dc chopper circuit or an output phase of an inverter. The design of the converter, including the SiC-specific gate drive circuit, is described. The hardware setup was operated at frequencies up to 200 kHz and efficiencies up to approximately 99% were recorded. A model for predicting converter and driver losses at different load currents, dc bus voltages, and operating temperatures was constructed; the predictions from the model were in good agreement with the measurements.

Original languageEnglish (US)
Title of host publicationIECON Proceedings (Industrial Electronics Conference)
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1291-1297
Number of pages7
ISBN (Electronic)9781479940325
DOIs
StatePublished - Feb 24 2014

Publication series

NameIECON Proceedings (Industrial Electronics Conference)

Keywords

  • Gate drive
  • Loss estimation
  • Practical characterization
  • SiC device

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    Ravi, L., Severson, E. L., Tewari, S., & Mohan, N. (2014). Circuit-level characterization and loss modeling of SiC-based power electronic converters. In IECON Proceedings (Industrial Electronics Conference) (pp. 1291-1297). [7048668] (IECON Proceedings (Industrial Electronics Conference)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IECON.2014.7048668