Chemical vapor deposition of titania/silica and zirconia films

Wayne L. Gladfelter; Ryan C. Smith; David Burleson; Charles J. Taylor; Jeffrey T. Roberts; Stephen A. Campbell; Noel Hoilien; Mike Tiner; Rama Hegde; Christopher Hobbs

Chemical vapor deposition of titania/silica and zirconia films

Wayne L. Gladfelter, Ryan C. Smith, David Burleson, Charles J. Taylor, Jeffrey T. Roberts, Stephen A. Campbell, Noel Hoilien, Mike Tiner, Rama Hegde, Christopher Hobbs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Amorphous thin films of composition Ti_xSi_1-xO₂ have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(OEt)₄ and either Ti(OⁱPr)₄ or anhydrous Ti(NO₃)₄ as the sources of SiO₂ and TiO₂, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. Films were amorphous to X-rays as deposited and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula Ti_xSi_1-xO₂) was dependent upon the choice of TiO₂ precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the flow of N₂ through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition. The CVD of zirconium dioxide (ZrO₂) films from zirconium tetra-tert-butoxide {Zr[OC(CH₃)₃]₄} is also described. The films, which were deposited on Si(100), were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), ellipsometry, X-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). Deposition was studied between ∼380 and 825 °C, and at precursor pressures between 4 × 10^-5 and 1 × 10^-4 Torr. The kinetics for steady-state growth were studied as functions of temperature and precursor pressure. Results were fit to a two-step kinetic model involving reversible precursor adsorption followed by irreversible decomposition to ZrO₂.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	S A Campbell, L A Clevenger, P B Griffin, C C Hobbs
Volume	670
State	Published - 2001
Event	Gate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States Duration: Apr 17 2001 → Apr 19 2001

Other

Other	Gate Stack and Silicide Issues in Silicon Processing II
Country/Territory	United States
City	San Francisco, CA
Period	4/17/01 → 4/19/01

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Gladfelter, WL, Smith, RC, Burleson, D, Taylor, CJ, Roberts, JT, Campbell, SA, Hoilien, N, Tiner, M, Hegde, R & Hobbs, C 2001, Chemical vapor deposition of titania/silica and zirconia films. in SA Campbell, LA Clevenger, PB Griffin & CC Hobbs (eds), Materials Research Society Symposium - Proceedings. vol. 670, Gate Stack and Silicide Issues in Silicon Processing II, San Francisco, CA, United States, 4/17/01.

@inproceedings{3f7564c21d7a41078c9bb849a0e0eb5f,

title = "Chemical vapor deposition of titania/silica and zirconia films",

abstract = "Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(OiPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. Films were amorphous to X-rays as deposited and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition. The CVD of zirconium dioxide (ZrO2) films from zirconium tetra-tert-butoxide {Zr[OC(CH3)3]4} is also described. The films, which were deposited on Si(100), were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), ellipsometry, X-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). Deposition was studied between ∼380 and 825 °C, and at precursor pressures between 4 × 10-5 and 1 × 10-4 Torr. The kinetics for steady-state growth were studied as functions of temperature and precursor pressure. Results were fit to a two-step kinetic model involving reversible precursor adsorption followed by irreversible decomposition to ZrO2.",

author = "Gladfelter, {Wayne L.} and Smith, {Ryan C.} and David Burleson and Taylor, {Charles J.} and Roberts, {Jeffrey T.} and Campbell, {Stephen A.} and Noel Hoilien and Mike Tiner and Rama Hegde and Christopher Hobbs",

year = "2001",

language = "English (US)",

volume = "670",

editor = "Campbell, {S A} and Clevenger, {L A} and Griffin, {P B} and Hobbs, {C C}",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Gate Stack and Silicide Issues in Silicon Processing II ; Conference date: 17-04-2001 Through 19-04-2001",

}

TY - GEN

T1 - Chemical vapor deposition of titania/silica and zirconia films

AU - Gladfelter, Wayne L.

AU - Smith, Ryan C.

AU - Burleson, David

AU - Taylor, Charles J.

AU - Roberts, Jeffrey T.

AU - Campbell, Stephen A.

AU - Hoilien, Noel

AU - Tiner, Mike

AU - Hegde, Rama

AU - Hobbs, Christopher

PY - 2001

Y1 - 2001

N2 - Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(OiPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. Films were amorphous to X-rays as deposited and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition. The CVD of zirconium dioxide (ZrO2) films from zirconium tetra-tert-butoxide {Zr[OC(CH3)3]4} is also described. The films, which were deposited on Si(100), were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), ellipsometry, X-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). Deposition was studied between ∼380 and 825 °C, and at precursor pressures between 4 × 10-5 and 1 × 10-4 Torr. The kinetics for steady-state growth were studied as functions of temperature and precursor pressure. Results were fit to a two-step kinetic model involving reversible precursor adsorption followed by irreversible decomposition to ZrO2.

AB - Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(OiPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. Films were amorphous to X-rays as deposited and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition. The CVD of zirconium dioxide (ZrO2) films from zirconium tetra-tert-butoxide {Zr[OC(CH3)3]4} is also described. The films, which were deposited on Si(100), were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), ellipsometry, X-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). Deposition was studied between ∼380 and 825 °C, and at precursor pressures between 4 × 10-5 and 1 × 10-4 Torr. The kinetics for steady-state growth were studied as functions of temperature and precursor pressure. Results were fit to a two-step kinetic model involving reversible precursor adsorption followed by irreversible decomposition to ZrO2.

UR - http://www.scopus.com/inward/record.url?scp=0035557331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035557331&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0035557331

VL - 670

BT - Materials Research Society Symposium - Proceedings

A2 - Campbell, S A

A2 - Clevenger, L A

A2 - Griffin, P B

A2 - Hobbs, C C

T2 - Gate Stack and Silicide Issues in Silicon Processing II

Y2 - 17 April 2001 through 19 April 2001

ER -

Chemical vapor deposition of titania/silica and zirconia films

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