Chemical vapor deposition of Al films from dimethylethylamine alane on GaAs(100)2×4 surfaces

Chemical vapor deposition (CVD) of Al from dimethylethylamine alane on atomically clean GaAs(100)2×4 surfaces has been investigated using an ultra-high-vacuum CVD reactor. Film composition, microstructure and growth rate were examined for deposition temperatures in the 100-500 °C range. The results indicate reduced impurity incorporation at the lower deposition temperatures, and growth rates that are relatively temperature-independent in the low-pressure regime examined (10^-4 to 10^-5 Torr). At temperatures ≥400 °C the microstructure of films deposited by CVD and evaporation is remarkably similar, but at the lower deposition temperatures (approximately 150 °C) the specific chemistry of the CVD process affects the film texture and preferential orientation.