Charge trapping in MOSFETS: BTI and RTN modeling for circuits

Gilson Wirth; Yu Cao; Jyothi B. Velamala; Ketul B. Sutaria; Takashi Sato

doi:10.1007/978-1-4614-7909-3_29

Charge trapping in MOSFETS: BTI and RTN modeling for circuits

Gilson Wirth, Yu Cao, Jyothi B. Velamala, Ketul B. Sutaria, Takashi Sato

Research output: Chapter in Book/Report/Conference proceeding › Chapter

3 Scopus citations

Abstract

This chapter presents experimental investigation and statistical modeling of charge trapping in the context of random telegraph noise (RTN) and bias temperature instability (BTI). The goal is to develop circuit (electrical) level models to support circuit designers. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in the electrical behavior of MOSFETs. Besides evaluating the average behavior, the modeling approach here proposed allows the derivation of statistically relevant parameters. It allows the derivation of an analytical formulation for the both noise (RTN) and aging (BTI) behavior. Monte Carlo simulations are also discussed and presented. Good agreement between experimental data, Monte Carlo simulations, and model is found.

Original language	English (US)
Title of host publication	Bias Temperature Instability for Devices and Circuits
Publisher	Springer New York
Pages	751-782
Number of pages	32
Volume	9781461479093
ISBN (Electronic)	9781461479093
ISBN (Print)	1461479088, 9781461479086
DOIs	https://doi.org/10.1007/978-1-4614-7909-3_29
State	Published - Jul 1 2014
Externally published	Yes

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© Springer Science+Business Media New York 2014. All rights are reserved.

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10.1007/978-1-4614-7909-3_29

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abstract = "This chapter presents experimental investigation and statistical modeling of charge trapping in the context of random telegraph noise (RTN) and bias temperature instability (BTI). The goal is to develop circuit (electrical) level models to support circuit designers. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in the electrical behavior of MOSFETs. Besides evaluating the average behavior, the modeling approach here proposed allows the derivation of statistically relevant parameters. It allows the derivation of an analytical formulation for the both noise (RTN) and aging (BTI) behavior. Monte Carlo simulations are also discussed and presented. Good agreement between experimental data, Monte Carlo simulations, and model is found.",

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AU - Sato, Takashi

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N2 - This chapter presents experimental investigation and statistical modeling of charge trapping in the context of random telegraph noise (RTN) and bias temperature instability (BTI). The goal is to develop circuit (electrical) level models to support circuit designers. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in the electrical behavior of MOSFETs. Besides evaluating the average behavior, the modeling approach here proposed allows the derivation of statistically relevant parameters. It allows the derivation of an analytical formulation for the both noise (RTN) and aging (BTI) behavior. Monte Carlo simulations are also discussed and presented. Good agreement between experimental data, Monte Carlo simulations, and model is found.

AB - This chapter presents experimental investigation and statistical modeling of charge trapping in the context of random telegraph noise (RTN) and bias temperature instability (BTI). The goal is to develop circuit (electrical) level models to support circuit designers. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in the electrical behavior of MOSFETs. Besides evaluating the average behavior, the modeling approach here proposed allows the derivation of statistically relevant parameters. It allows the derivation of an analytical formulation for the both noise (RTN) and aging (BTI) behavior. Monte Carlo simulations are also discussed and presented. Good agreement between experimental data, Monte Carlo simulations, and model is found.

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Charge trapping in MOSFETS: BTI and RTN modeling for circuits

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