Charge trapping and device degradation induced by x-ray irradiation in metal-oxide-semiconductor field-effect transistors

Keyphrases

• Annealing 50%
• Charge Trapping 100%
• Device Degradation 100%
• Electron Traps 50%
• Gate Voltage 50%
• Hole Trapping 50%
• Hot Carrier Stress 100%
• Hot Carriers 50%
• Hydrogen Annealing 50%
• Interface Trap Generation 50%
• Interface Traps 50%
• Irradiated Metals 50%
• Irradiation 100%
• Latent Damage 100%
• MOSFET 100%
• Oxide Charge 50%
• Oxides 100%
• Si-SiO2 Interface 50%
• Threshold Voltage 50%
• Transconductance 50%

Material Science

• Charge Trapping 100%
• Hot Carrier 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 100%

Engineering

• Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets) 100%