Charge trapping and degradation properties of PZT thin films for MEMS

Hyeon Seag Kim, D. L. Polla, S. A. Campbell

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


The electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitance-voltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Original languageEnglish (US)
Pages (from-to)161-166
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996


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