Charge trapping and degradation of high permittivity TiO2 dielectric metal-oxide semiconductor field effect transistors

Hyeon Saeg Kim, S. A. Campbell, D. C. Gilmer, D. L. Polla

Research output: Contribution to journalConference articlepeer-review


Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higher permittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and capacitance-voltage measurements were done on 190 angstroms layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide. Measurements of the high and low frequency capacitance indicate that virtually no interface states are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

Original languageEnglish (US)
Pages (from-to)321-326
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996


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