Keyphrases
Charge Trapping
100%
Accumulation Mode
100%
Gate Voltage
80%
Field-effect Transistors
40%
Transistor Device
40%
Topological Insulator
40%
Trapping Parameters
40%
Silica
20%
Oxide Film
20%
Device Characteristics
20%
Mg2+
20%
Ultra-deep Well
20%
X-ray Photoelectron Spectroscopy
20%
Inversion Mode
20%
Transfer Characteristics
20%
Polynomial Model
20%
Resistivity
20%
Drain Current
20%
High Electron Mobility
20%
Gate Oxide
20%
Complementary Metal Oxide Semiconductor
20%
Tunnel Technique
20%
Gate Leakage Current
20%
Simple Polynomials
20%
Hysteresis Behavior
20%
Deep Charging
20%
Interfacial Chemistry
20%
Charge Fluctuation
20%
Hysteretic Behavior
20%
Trap-assisted Tunneling
20%
Metal-oxide-semiconductor Devices
20%
Oxygen Impurity
20%
Topological Materials
20%
Insulator-based
20%
Topological Insulator Material
20%
Engineering
Field Effect Transistors
100%
Gate Voltage
100%
Field-Effect Transistor
50%
Experimental Result
25%
Gate Oxide
25%
Polynomial Model
25%
Current Drain
25%
Ray Photoelectron Spectroscopy
25%
Good Match
25%
Oxide Film
25%
Complementary Metal-Oxide-Semiconductor Device
25%
Tunnel Construction
25%
Silicon Dioxide
25%
Material Science
Field Effect Transistors
100%
Charge Trapping
100%
Oxide Film
33%
Film
33%
Electrical Resistivity
33%
X-Ray Photoelectron Spectroscopy
33%
Complementary Metal-Oxide-Semiconductor Device
33%
Oxide Compound
33%
Electron Mobility
33%
Physics
Topological Insulator
100%
Field Effect Transistor
66%
Physics
33%
X Ray Spectroscopy
33%
Semiconductor Device
33%
Metal Oxide Semiconductor
33%
Electron Mobility
33%
Oxide Film
33%