Charge transport in nanocrystalline germanium/hydrogenated amorphous silicon mixed-phase thin films

Kent E. Bodurtha, James Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Mixed phase thin films consisting of hydrogenated amorphous silicon (a-Si:H) in which germanium nanocrystals (nc-Ge) are embedded have been synthesized using a dual-chamber codeposition system. Raman spectroscopy and x-ray diffraction measurements confirm the presence of 4-4.5 nm diameter nc-Ge homogenously embedded within the a-Si:H matrix. The conductivity and thermopower are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10%, the thermopower is n-type (as in undoped a-Si:H) while for XGe > 25% p-type transport is observed. For films with 10 < XGe < 25% the thermopower shifts from p-type to n-type as the temperature is increased. This transition is faster than expected from a standard two-channel model for charge transport.

Original languageEnglish (US)
Title of host publicationFilm Silicon Science and Technology
Pages195-200
Number of pages6
Volume1536
DOIs
StatePublished - Dec 12 2013
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 1 2013Apr 5 2013

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/1/134/5/13

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