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Charge relaxation in a single-electron Si/SiGe double quantum dot
K. Wang
, C. Payette
, Y. Dovzhenko
, P. W. Deelman
, J. R. Petta
Physics and Astronomy (Twin Cities)
Research output
:
Contribution to journal
›
Article
›
peer-review
75
Scopus citations
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Keyphrases
SiGe
100%
Single Electron
100%
Double Quantum Dot
100%
Charge Relaxation Time
100%
Order of Magnitude
50%
Detuning
50%
Low-lying Excited States
50%
Accumulation Mode
50%
Energy Structure
50%
Device Configuration
50%
Tunnel Coupling
50%
Charge Qubit
50%
Photon-assisted Tunneling
50%
Physics
Quantum Dot
100%
Relaxation Time
33%