Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)

Wei Xie, Feilong Liu, Sha Shi, P. Paul Ruden, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 1013 cm-2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.

Original languageEnglish (US)
Pages (from-to)2527-2532
Number of pages6
JournalAdvanced Materials
Volume26
Issue number16
DOIs
StatePublished - Apr 23 2014

Keywords

  • conductivity peak
  • effective medium approximation
  • electric double layer transistors (EDLTs)
  • electrolyte gating
  • traps

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