A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 1013 cm-2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Apr 23 2014|
- conductivity peak
- effective medium approximation
- electric double layer transistors (EDLTs)
- electrolyte gating