Charge carrier extraction dynamics for organic field effect transistor structures

Hsiu Chuang Chang, P. Paul Ruden, Yan Liang, C. Daniel Frisbie

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We present experimental data and a model for charge carrier extraction from the channel of a device structure resembling an organic field effect transistor. The initially accumulated channel is depleted by a sudden change of the gate voltage. The measured discharge current transient decreases either as a power law or exponentially if the final state of the channel is completely or partially depleted, respectively. The extraction process is modeled with a capacitor/resistor circuit with a time-dependent resistance that increases with decreasing channel carrier density. Analytical and numerical results are discussed and compared with the experimental data.

Original languageEnglish (US)
Article number073306
JournalApplied Physics Letters
Issue number7
StatePublished - Aug 15 2011

Bibliographical note

Funding Information:
This work was partially supported by the MRSEC Program of the National Science Foundation under Award No. 0819885. Access to the facilities of the Minnesota Supercomputing Institute for Advanced Computational Research is gratefully acknowledged. C.D.F. also acknowledges support from the Department of Energy under DE-FG02-05ER46252.


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