The properties of rare earth-doped InGaAsP thin films are investigated with special interest in magneto-optical device applications. Thin films of InP, InGaAs, and InGaAsP are grown through liquid phase epitaxy. Following this, the films are lattice matched to the (001) InP substrates. Finally, the results obtained from the study are discussed.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Dec 1 1995|
|Event||Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA|
Duration: Apr 17 1995 → Apr 21 1995