TY - JOUR
T1 - Characterization of layer-by-layer self-assembled carbon nanotube multilayer thin films
AU - Xue, Wei
AU - Cui, Tianhong
PY - 2007/4/11
Y1 - 2007/4/11
N2 - Single-walled carbon nanotube (SWNT) multilayer thin films are deposited on silicon substrates with layer-by-layer self-assembly. The structural, mechanical, electrical, and thermal properties of the thin films are investigated using quartz crystal microbalance (QCM), nanoindentation, and rapid thermal annealing techniques, respectively. Scanning electron microscopy inspection shows that the SWNT multilayer is formed through a dense network of nanotube bundles. Based on the QCM measurement, the volume and mass ratios of SWNTs in the multilayer are calculated as 63.2% and 75%, respectively. Nanoindentation on the SWNT thin film shows that its Young's modulus and hardness are approximately 17 and 0.6 GPa, respectively. Current-voltage (I-V) and four-point probe techniques are used to study the electrical properties of the SWNT thin film after being heated at different temperatures. The conductance of the SWNT thin film at 300°C is measured as 2.29 mS, which is 50 times higher than that at room temperature (0.045 mS).
AB - Single-walled carbon nanotube (SWNT) multilayer thin films are deposited on silicon substrates with layer-by-layer self-assembly. The structural, mechanical, electrical, and thermal properties of the thin films are investigated using quartz crystal microbalance (QCM), nanoindentation, and rapid thermal annealing techniques, respectively. Scanning electron microscopy inspection shows that the SWNT multilayer is formed through a dense network of nanotube bundles. Based on the QCM measurement, the volume and mass ratios of SWNTs in the multilayer are calculated as 63.2% and 75%, respectively. Nanoindentation on the SWNT thin film shows that its Young's modulus and hardness are approximately 17 and 0.6 GPa, respectively. Current-voltage (I-V) and four-point probe techniques are used to study the electrical properties of the SWNT thin film after being heated at different temperatures. The conductance of the SWNT thin film at 300°C is measured as 2.29 mS, which is 50 times higher than that at room temperature (0.045 mS).
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U2 - 10.1088/0957-4484/18/14/145709
DO - 10.1088/0957-4484/18/14/145709
M3 - Article
AN - SCOPUS:33947175625
SN - 0957-4484
VL - 18
JO - Nanotechnology
JF - Nanotechnology
IS - 14
M1 - 145709
ER -