Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

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IRG-1: Ionic Control of Materials
Leighton, C. (Leader), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Mkhoyan, A. (Senior Investigator), Walter, J. (Senior Investigator) & Wang, X. (Senior Investigator)
9/1/20 → …
Project: Research project
University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)
Leighton, C. (PI) & Lodge, T. (CoI)
THE NATIONAL SCIENCE FOUNDATION
9/1/20 → 8/31/26
Project: Research project

Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD