Keyphrases
Schottky Diode
100%
Ga2O3
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Drift Layer
100%
Ideality Factor
40%
Barrier Height
40%
Temperature Effect
20%
Heterostructure
20%
Si-doped
20%
Room Temperature
20%
Breakdown Voltage
20%
Current Density-voltage
20%
Homoepitaxial
20%
Poole-Frenkel
20%
Epitaxial Layers
20%
Leakage Mechanism
20%
C-V Measurement
20%
Sn Doping
20%
On-resistance
20%
Schottky Barrier Diode
20%
β-Ga2O3 Thin Film
20%
Reverse Leakage
20%
X-ray Diffraction (XRD) Analysis
20%
Voltage Data
20%
Diode Characteristics
20%
Material Science
Schottky Diode
100%
Metal-Organic Chemical Vapor Deposition
100%
Heterojunction
25%
Density
25%
Schottky Barrier
25%
X Ray Diffraction Analysis
25%
Thin Films
25%
Epitaxial Film
25%