Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram; Fengdeng Liu; Fikadu Alema; Andrei Osinsky; Bharat Jalan; Steven J. Koester

doi:10.1063/5.0155622

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Growing a thick high-quality epitaxial layer on the β-Ga₂O₃ substrate is crucial in commercializing β-Ga₂O₃ devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga₂O₃ and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga₂O₃ thin films grown on Sn-doped (001) and (010) β-Ga₂O₃ substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density-voltage data for different Schottky diodes, and C-V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170-360 K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.

Original language	English (US)
Article number	232105
Journal	Applied Physics Letters
Volume	122
Issue number	23
DOIs	https://doi.org/10.1063/5.0155622
State	Published - Jun 5 2023

Bibliographical note

Funding Information:
P.P.S. and S.J.K. acknowledge support by the University of Minnesota Futures grant program and the Air Force Office of Scientific Research (AFOSR) (Program Manager Dr. Kenneth Goretta) under Award No. FA9550-19-1-0245. F.A. and A.O acknowledge the Office of Naval Research (Program Manager Mr. Lynn Petersen) under Award No. N6833518C0192. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC programs (Award No. DMR-2011401).

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@article{db93f13155574665bcdf48df15125845,

title = "Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD",

abstract = "Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density-voltage data for different Schottky diodes, and C-V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170-360 K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.",

author = "{P. Sundaram}, Prakash and Fengdeng Liu and Fikadu Alema and Andrei Osinsky and Bharat Jalan and Koester, {Steven J.}",

note = "Funding Information: P.P.S. and S.J.K. acknowledge support by the University of Minnesota Futures grant program and the Air Force Office of Scientific Research (AFOSR) (Program Manager Dr. Kenneth Goretta) under Award No. FA9550-19-1-0245. F.A. and A.O acknowledge the Office of Naval Research (Program Manager Mr. Lynn Petersen) under Award No. N6833518C0192. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC programs (Award No. DMR-2011401). Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = jun,

day = "5",

doi = "10.1063/5.0155622",

language = "English (US)",

volume = "122",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

AU - P. Sundaram, Prakash

AU - Liu, Fengdeng

AU - Alema, Fikadu

AU - Osinsky, Andrei

AU - Jalan, Bharat

AU - Koester, Steven J.

N1 - Funding Information: P.P.S. and S.J.K. acknowledge support by the University of Minnesota Futures grant program and the Air Force Office of Scientific Research (AFOSR) (Program Manager Dr. Kenneth Goretta) under Award No. FA9550-19-1-0245. F.A. and A.O acknowledge the Office of Naval Research (Program Manager Mr. Lynn Petersen) under Award No. N6833518C0192. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC programs (Award No. DMR-2011401). Publisher Copyright: © 2023 Author(s).

PY - 2023/6/5

Y1 - 2023/6/5

N2 - Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density-voltage data for different Schottky diodes, and C-V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170-360 K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.

AB - Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density-voltage data for different Schottky diodes, and C-V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170-360 K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.

UR - http://www.scopus.com/inward/record.url?scp=85161923753&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85161923753&partnerID=8YFLogxK

U2 - 10.1063/5.0155622

DO - 10.1063/5.0155622

M3 - Article

AN - SCOPUS:85161923753

SN - 0003-6951

VL - 122

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232105

ER -

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Abstract

Bibliographical note

MRSEC Support

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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

IRG-1: Ionic Control of Materials

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Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

Abstract

Bibliographical note

MRSEC Support

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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

IRG-1: Ionic Control of Materials

Cite this

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD