Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester

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Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density-voltage data for different Schottky diodes, and C-V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170-360 K) of the ideality factor, barrier height, and Poole-Frenkel reverse leakage mechanism are also analyzed from the J-V-T characteristics of the fabricated Schottky diodes.

Original languageEnglish (US)
Article number232105
JournalApplied Physics Letters
Issue number23
StatePublished - Jun 5 2023

Bibliographical note

Funding Information:
P.P.S. and S.J.K. acknowledge support by the University of Minnesota Futures grant program and the Air Force Office of Scientific Research (AFOSR) (Program Manager Dr. Kenneth Goretta) under Award No. FA9550-19-1-0245. F.A. and A.O acknowledge the Office of Naval Research (Program Manager Mr. Lynn Petersen) under Award No. N6833518C0192. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation (NSF) through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC programs (Award No. DMR-2011401).

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© 2023 Author(s).

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