Doping modulated amorphous silicon films have been synthesized which exhibit photoconductivity decay times in excess of 1000 seconds at 78 K. The time and intensity dependence of the photoconductivity is described by a model in which photo-excited charge carriers are spatially separated to separate layers by the built-in pn junction fields and reside in band tail states.
|Original language||English (US)|
|Title of host publication||Materials Research Society Symposia Proceedings|
|Publisher||Materials Research Soc|
|Number of pages||6|
|State||Published - Dec 1 1986|