Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate

Sangin Kim, Anand Gopinath

Research output: Contribution to journalConference articlepeer-review

Abstract

The partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate and its gain spectrum under current injection are studied. The calculated gain spectra showed blueshift of the gain peak as the carrier density is increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.

Original languageEnglish (US)
Pages (from-to)144-145
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - Dec 1 1997
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: Nov 10 1997Nov 13 1997

Fingerprint Dive into the research topics of 'Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate'. Together they form a unique fingerprint.

Cite this