The partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate and its gain spectrum under current injection are studied. The calculated gain spectra showed blueshift of the gain peak as the carrier density is increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - Dec 1 1997|
|Event||Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA|
Duration: Nov 10 1997 → Nov 13 1997