Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate

Sangin Kim; Anand Gopinath

Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate

Sangin Kim, Anand Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate and its gain spectrum under current injection are studied. The calculated gain spectra showed blueshift of the gain peak as the carrier density is increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×10¹⁸ cm^-3 to 2×10¹⁸ cm^-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.

Original language	English (US)
Pages (from-to)	144-145
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - Dec 1 1997
Event	Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: Nov 10 1997 → Nov 13 1997

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title = "Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate",

abstract = "The partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate and its gain spectrum under current injection are studied. The calculated gain spectra showed blueshift of the gain peak as the carrier density is increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.",

author = "Sangin Kim and Anand Gopinath",

year = "1997",

month = dec,

day = "1",

language = "English (US)",

volume = "2",

pages = "144--145",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) ; Conference date: 10-11-1997 Through 13-11-1997",

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TY - JOUR

T1 - Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate

AU - Kim, Sangin

AU - Gopinath, Anand

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate and its gain spectrum under current injection are studied. The calculated gain spectra showed blueshift of the gain peak as the carrier density is increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.

AB - The partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate and its gain spectrum under current injection are studied. The calculated gain spectra showed blueshift of the gain peak as the carrier density is increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×1018 cm-3 to 2×1018 cm-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.

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M3 - Conference article

AN - SCOPUS:0031341007

SN - 1092-8081

VL - 2

SP - 144

EP - 145

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2)

Y2 - 10 November 1997 through 13 November 1997

ER -

Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate

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