Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

Yanning Sun; S. J. Koester; E. W. Kiewra; K. E. Fogel; D. K. Sadana; D. J. Webb; J. Fompeyrine; J. P. Locquet; M. Sousa; R. Germann

Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

Yanning Sun
, S. J. Koester
, E. W. Kiewra
, K. E. Fogel
, D. K. Sadana
, D. J. Webb
, J. Fompeyrine
, J. P. Locquet
, M. Sousa
, R. Germann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-50
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: Jun 26 2006 → Jun 28 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	6/26/06 → 6/28/06

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Sun, Y., Koester, S. J., Kiewra, E. W., Fogel, K. E., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J. P., Sousa, M., & Germann, R. (2006). Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. In 64th DRC 2006 - Device Research Conference (pp. 49-50). (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc..

Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. / Sun, Yanning; Koester, S. J.; Kiewra, E. W. et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 49-50 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sun, Y, Koester, SJ, Kiewra, EW, Fogel, KE, Sadana, DK, Webb, DJ, Fompeyrine, J, Locquet, JP, Sousa, M & Germann, R 2006, Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 49-50, 64th Device Research Conference, DRC 2006, Parker, United States, 6/26/06.

@inproceedings{8ef47651f7e94c0eb010cd73559c44a6,

title = "Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics",

author = "Yanning Sun and Koester, \{S. J.\} and Kiewra, \{E. W.\} and Fogel, \{K. E.\} and Sadana, \{D. K.\} and Webb, \{D. J.\} and J. Fompeyrine and Locquet, \{J. P.\} and M. Sousa and R. Germann",

year = "2006",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "49--50",

booktitle = "64th DRC 2006 - Device Research Conference",

note = "64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

}

TY - GEN

T1 - Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

AU - Sun, Yanning

AU - Koester, S. J.

AU - Kiewra, E. W.

AU - Fogel, K. E.

AU - Sadana, D. K.

AU - Webb, D. J.

AU - Fompeyrine, J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

PY - 2006

Y1 - 2006

UR - https://www.scopus.com/pages/publications/79952691603

UR - https://www.scopus.com/pages/publications/79952691603#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:79952691603

T3 - Device Research Conference - Conference Digest, DRC

SP - 49

EP - 50

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

Publication series

Conference

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