Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

Yanning Sun; S. J. Koester; E. W. Kiewra; K. E. Fogel; D. K. Sadana; D. J. Webb; J. Fompeyrine; J. P. Locquet; M. Sousa; R. Germann

Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

Yanning Sun, S. J. Koester, E. W. Kiewra, K. E. Fogel, D. K. Sadana, D. J. Webb, J. Fompeyrine, J. P. Locquet, M. Sousa, R. Germann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Original language	English (US)
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-50
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: Jun 26 2006 → Jun 28 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	6/26/06 → 6/28/06

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Sun, Y., Koester, S. J., Kiewra, E. W., Fogel, K. E., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J. P., Sousa, M., & Germann, R. (2006). Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. In 64th DRC 2006 - Device Research Conference (pp. 49-50). (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc..

Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. / Sun, Yanning; Koester, S. J.; Kiewra, E. W. et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 49-50 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sun, Y, Koester, SJ, Kiewra, EW, Fogel, KE, Sadana, DK, Webb, DJ, Fompeyrine, J, Locquet, JP, Sousa, M & Germann, R 2006, Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 49-50, 64th Device Research Conference, DRC 2006, Parker, United States, 6/26/06.

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title = "Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics",

author = "Yanning Sun and Koester, \{S. J.\} and Kiewra, \{E. W.\} and Fogel, \{K. E.\} and Sadana, \{D. K.\} and Webb, \{D. J.\} and J. Fompeyrine and Locquet, \{J. P.\} and M. Sousa and R. Germann",

year = "2006",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Sun, Yanning

AU - Koester, S. J.

AU - Kiewra, E. W.

AU - Fogel, K. E.

AU - Sadana, D. K.

AU - Webb, D. J.

AU - Fompeyrine, J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

PY - 2006

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M3 - Conference contribution

AN - SCOPUS:79952691603

T3 - Device Research Conference - Conference Digest, DRC

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BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Buried-channel 1n0.70Ga0.30As/1n0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

Publication series

Conference

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