Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Mandip J. Sibakoti; Sreejith Karthikeyan; Sehyun Hwang; Timothy Bontrager; Stephen A. Campbell

doi:10.1109/PVSC.2016.7750039

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Mandip J. Sibakoti, Sreejith Karthikeyan, Sehyun Hwang, Timothy Bontrager, Stephen A. Campbell

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The saturation of V_Oc at larger band gaps in Cu(In, Ga)Se₂ devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2263-2268
Number of pages	6
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750039
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

CIAGS
CIGS
DLCP
DLTS
Electrical Characterization
SCAPS modeling
Wide band-gap solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Publisher link

10.1109/PVSC.2016.7750039

Find It

Find It at U of M Libraries

Cite this

Sibakoti, M. J., Karthikeyan, S., Hwang, S., Bontrager, T., & Campbell, S. A. (2016). Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2263-2268). Article 7750039 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750039

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. / Sibakoti, Mandip J.; Karthikeyan, Sreejith; Hwang, Sehyun et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2263-2268 7750039 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sibakoti, MJ, Karthikeyan, S, Hwang, S, Bontrager, T & Campbell, SA 2016, Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7750039, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 2263-2268, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750039

Sibakoti MJ, Karthikeyan S, Hwang S, Bontrager T, Campbell SA. Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2263-2268. 7750039. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7750039

Sibakoti, Mandip J. ; Karthikeyan, Sreejith ; Hwang, Sehyun et al. / Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2263-2268 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{10e4c1d7a4db4cdc8512a0e43a2a9233,

title = "Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells",

abstract = "The saturation of VOc at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.",

keywords = "CIAGS, CIGS, DLCP, DLTS, Electrical Characterization, SCAPS modeling, Wide band-gap solar cells",

author = "Sibakoti, {Mandip J.} and Sreejith Karthikeyan and Sehyun Hwang and Timothy Bontrager and Campbell, {Stephen A.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750039",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2263--2268",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

}

TY - GEN

T1 - Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

AU - Sibakoti, Mandip J.

AU - Karthikeyan, Sreejith

AU - Hwang, Sehyun

AU - Bontrager, Timothy

AU - Campbell, Stephen A.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - The saturation of VOc at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

AB - The saturation of VOc at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

KW - CIAGS

KW - CIGS

KW - DLCP

KW - DLTS

KW - Electrical Characterization

KW - SCAPS modeling

KW - Wide band-gap solar cells

UR - http://www.scopus.com/inward/record.url?scp=85003698479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003698479&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7750039

DO - 10.1109/PVSC.2016.7750039

M3 - Conference contribution

AN - SCOPUS:85003698479

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2263

EP - 2268

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Abstract

Publication series

Other

Bibliographical note

Keywords

UN SDGs

Publisher link

Find It

Other files and links

Fingerprint

Cite this