Boron- and phosphorus-doped silicon germanium alloy nanocrystals - Nonthermal plasma synthesis and gas-phase thin film deposition

David J. Rowe; Uwe R. Kortshagen

doi:10.1063/1.4865158

Boron- and phosphorus-doped silicon germanium alloy nanocrystals - Nonthermal plasma synthesis and gas-phase thin film deposition

David J. Rowe, Uwe R. Kortshagen

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si_1-xGe_x for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

Original language	English (US)
Article number	022104
Journal	APL Materials
Volume	2
Issue number	2
DOIs	https://doi.org/10.1063/1.4865158
State	Published - Feb 2014

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@article{cb6563928ef44407a12fa06b1fb278cf,

title = "Boron- and phosphorus-doped silicon germanium alloy nanocrystals - Nonthermal plasma synthesis and gas-phase thin film deposition",

abstract = "Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1-xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.",

author = "Rowe, {David J.} and Kortshagen, {Uwe R.}",

year = "2014",

month = feb,

doi = "10.1063/1.4865158",

language = "English (US)",

volume = "2",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Boron- and phosphorus-doped silicon germanium alloy nanocrystals - Nonthermal plasma synthesis and gas-phase thin film deposition

AU - Rowe, David J.

AU - Kortshagen, Uwe R.

PY - 2014/2

Y1 - 2014/2

N2 - Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1-xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

AB - Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1-xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

UR - http://www.scopus.com/inward/record.url?scp=84900016071&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900016071&partnerID=8YFLogxK

U2 - 10.1063/1.4865158

DO - 10.1063/1.4865158

M3 - Article

AN - SCOPUS:84900016071

VL - 2

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 2

M1 - 022104

ER -

Boron- and phosphorus-doped silicon germanium alloy nanocrystals - Nonthermal plasma synthesis and gas-phase thin film deposition

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