Black Phosphorus p-MOSFETs with 7-nm HfO2 Gate Dielectric and Low Contact Resistance

Nazila Haratipour, Matthew C. Robbins, Steven J. Koester

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

We report record contact resistance and transconductance in locally back-gated black phosphorus p-MOSFETs with 7-nm thick HfO2 gate dielectrics. Devices with effective gate lengths, Leff, from 0.55 to 0.17 μm were characterized and shown to have contact resistance values as low as 1.14 ± 0.05 Ω-mm. In addition, devices with Leff = 0.17 ±m displayed extrinsic transconductance exceeding 250 ±S/±m and ON-state current approaching 300 ±A/±m.

Original languageEnglish (US)
Article number7047682
Pages (from-to)411-413
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number4
DOIs
StatePublished - Apr 1 2015

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Gate dielectrics
Transconductance
Contact resistance
Phosphorus

Keywords

  • black phosphorus
  • contact resistance
  • high-K gate dielectrics
  • MOSFET
  • Two-dimensional materials

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 1

Cite this

Black Phosphorus p-MOSFETs with 7-nm HfO2 Gate Dielectric and Low Contact Resistance. / Haratipour, Nazila; Robbins, Matthew C.; Koester, Steven J.

In: IEEE Electron Device Letters, Vol. 36, No. 4, 7047682, 01.04.2015, p. 411-413.

Research output: Contribution to journalArticle

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