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We report record contact resistance and transconductance in locally back-gated black phosphorus p-MOSFETs with 7-nm thick HfO2 gate dielectrics. Devices with effective gate lengths, Leff, from 0.55 to 0.17 μm were characterized and shown to have contact resistance values as low as 1.14 ± 0.05 Ω-mm. In addition, devices with Leff = 0.17 ±m displayed extrinsic transconductance exceeding 250 ±S/±m and ON-state current approaching 300 ±A/±m.
Bibliographical notePublisher Copyright:
© 1980-2012 IEEE.
- black phosphorus
- contact resistance
- high-K gate dielectrics
- Two-dimensional materials
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