Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Matthew C. Robbins, Steven J. Koester

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 104at VDS = 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.

Original languageEnglish (US)
Article number7781615
Pages (from-to)285-288
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number2
DOIs
StatePublished - Feb 2017

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (NSF) through the University of Minnesota MRSEC under Award DMR-1420013, and also used the Minnesota Nano Center and Characterization Facilities, which receive partial support from NSF

Keywords

  • 2D materials
  • Black phosphorus
  • doping
  • MOSFETs

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 3

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