Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Matthew C. Robbins; Steven J. Koester

doi:10.1109/LED.2016.2638818

Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Matthew C. Robbins, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve I_ON/I_OFF of greater than 10⁴at V_DS = 1.0 V with only a 14% increase in subthreshold slope from V_DS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.

Original language	English (US)
Article number	7781615
Pages (from-to)	285-288
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	2
DOIs	https://doi.org/10.1109/LED.2016.2638818
State	Published - Feb 2017

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

2D materials
Black phosphorus
doping
MOSFETs

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10.1109/LED.2016.2638818

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title = "Black phosphorus p- and n-MOSFETs with electrostatically doped contacts",

abstract = "This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 104at VDS = 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.",

keywords = "2D materials, Black phosphorus, doping, MOSFETs",

author = "Robbins, {Matthew C.} and Koester, {Steven J.}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AU - Robbins, Matthew C.

AU - Koester, Steven J.

PY - 2017/2

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N2 - This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 104at VDS = 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.

AB - This letter presents a novel device, which is used to realize black phosphorus (BP) p-MOSFETs and n-MOSFETs in a single structure by means of electrostatically doped source and drain regions. The devices achieve ION/IOFF of greater than 104at VDS = 1.0 V with only a 14% increase in subthreshold slope from VDS = 0.1 to 1.0 V. These results represent a substantial improvement in OFF-state characteristics over conventional Schottky-contacted BP MOSFETs at high ${V} -{\textsf {DS}}$ and also pave the way for the realization of novel devices, such as tunneling field-effect transistors.

KW - 2D materials

KW - Black phosphorus

KW - doping

KW - MOSFETs

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DO - 10.1109/LED.2016.2638818

M3 - Article

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EP - 288

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 7781615

ER -

Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Abstract

Bibliographical note

Keywords

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University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

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Black phosphorus p- and n-MOSFETs with electrostatically doped contacts

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

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Fingerprint

Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this