Black phosphorus avalanche photodetector

Mahmoud R.M. Atalla, Steven J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations


The strong light-matter interaction of atomically-thin layered black phosphorus (BP) has attracted great attention recently. Exfoliated few-layer and monolayer BP flakes have a layer-tunable direct bandgap that varies from 2.0 eV for monolayer to 0.3 eV for bulk, which makes BP a very promising optoelectronic material in the visible and telecom wavelengths [1-3]. The high mobility of BP devices suggested its utilization as an active material of an avalanche photodetector (APD). Recently, APDs utilizing two-dimensional (2D) materials such as transition-metal dichalcogenides (e.g. MoS2) and layered III-VI semiconductors (e.g. InSe) have been demonstrated [4,5]. Both of these 2D materials possess wide bandgaps that discourage their usage in the infrared [6,7]. The successful demonstration of waveguide-integrated BP photodetector working at 1.55 μm wavelength [1] has stimulated the pursuit of high-performance BP APDs. In this work, we report on the first 2D material-based BP APD featuring high external quantum efficiency (EQE) and avalanche gain. These results provide strong evidence that BP is a promising material for high-performance optical communication and imaging systems.

Original languageEnglish (US)
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
StatePublished - Aug 1 2017
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: Jun 25 2017Jun 28 2017

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other75th Annual Device Research Conference, DRC 2017
Country/TerritoryUnited States
CitySouth Bend

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

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