Bipolar Random Spike and Bipolar Random Number Generation by Two Magnetic Tunnel Junctions

Yang Lv, Brandon R Zink, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

Abstract

In several recent studies, the probabilistic nature of magnetic tunnel junction (MTJ) switching has been utilized rather than suppressed for proposals and demonstrations of specific or novel scenarios or applications, such as true random number generation, neural spike generation, stochastic computing (SC), and probabilistic spin logic. Among all schemes of operations for generating tunable random signals, dual-biasing is very simple but also robust against device variations. When an MTJ is connected to a voltage source with polarity encouraging parallel (P)-to-antiparallel (AP) switching by spin-transfer torque (STT), and under a static bias field that favors P-state, the MTJ can switch back and forth between two states randomly, due to the state-dependent modulation of current by the tunneling magnetoresistance (TMR) of the MTJ. In this work, we demonstrate bipolar random signal generation by connecting two MTJs in series with a voltage source.

Original languageEnglish (US)
Pages (from-to)1582-1587
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume69
Issue number3
DOIs
StatePublished - Mar 1 2022

Bibliographical note

Funding Information:
This work was supported in part by the Center for Probabilistic Spin Logic for Low-Energy Boolean and Non-Boolean Computing (CAPSL) (one of the Nanoelectronic Computing Research (nCORE) centers as task 2759.001) and in part by the Semiconductor Research Corporation (SRC) Program sponsored by the NSF under Grant 1739635.

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • Bipolar encoding
  • bipolar random signal
  • magnetic tunnel junction (MTJ)
  • magnetization reversal
  • neuromorphic computing
  • random number generation
  • spin transfer torque (STT)
  • stochastic computing (SC)
  • tunnel magnetoresistance

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