Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

D. J.P. De Sousa; P. M. Haney; D. L. Zhang; J. P. Wang; Tony Low

doi:10.1103/PhysRevB.101.081404

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

D. J.P. De Sousa, P. M. Haney, D. L. Zhang, J. P. Wang, Tony Low

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Abstract

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling, and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

Original language	English (US)
Article number	081404
Journal	Physical Review B
Volume	101
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.101.081404
State	Published - Feb 15 2020

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De Sousa, D. J. P., Haney, P. M., Zhang, D. L., Wang, J. P., & Low, T. (2020). Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions. Physical Review B, 101(8), [081404]. https://doi.org/10.1103/PhysRevB.101.081404

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10.1103/PhysRevB.101.081404