Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

D. J.P. De Sousa; P. M. Haney; D. L. Zhang; J. P. Wang; Tony Low

doi:10.1103/PhysRevB.101.081404

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

D. J.P. De Sousa, P. M. Haney, D. L. Zhang, J. P. Wang, Tony Low

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling, and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

Original language	English (US)
Article number	081404
Journal	Physical Review B
Volume	101
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.101.081404
State	Published - Feb 15 2020

Bibliographical note

Funding Information:
Acknowledgments . This work was partially supported by C-SPIN/STARnet, DARPA ERI FRANC program, and ASCENT/JUMP.

Publisher Copyright:
© 2020 American Physical Society.

Publisher link

10.1103/PhysRevB.101.081404

Find It

Find It at U of M Libraries

Cite this

@article{85432763d15e42e0880d7ab0a1f61d62,

title = "Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions",

abstract = "We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling, and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.",

author = "{De Sousa}, {D. J.P.} and Haney, {P. M.} and Zhang, {D. L.} and Wang, {J. P.} and Tony Low",

note = "Funding Information: Acknowledgments . This work was partially supported by C-SPIN/STARnet, DARPA ERI FRANC program, and ASCENT/JUMP. Publisher Copyright: {\textcopyright} 2020 American Physical Society.",

year = "2020",

month = feb,

day = "15",

doi = "10.1103/PhysRevB.101.081404",

language = "English (US)",

volume = "101",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

AU - De Sousa, D. J.P.

AU - Haney, P. M.

AU - Zhang, D. L.

AU - Wang, J. P.

AU - Low, Tony

PY - 2020/2/15

Y1 - 2020/2/15

N2 - We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling, and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

AB - We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling, and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

UR - http://www.scopus.com/inward/record.url?scp=85079781388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85079781388&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.101.081404

DO - 10.1103/PhysRevB.101.081404

M3 - Article

AN - SCOPUS:85079781388

VL - 101

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 8

M1 - 081404

ER -

Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

Abstract

Bibliographical note

Publisher link

Find It

Other files and links

Fingerprint

Cite this