Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions

D. J.P. De Sousa, P. M. Haney, D. L. Zhang, J. P. Wang, Tony Low

Research output: Contribution to journalArticlepeer-review

Abstract

We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling, and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.

Original languageEnglish (US)
Article number081404
JournalPhysical Review B
Volume101
Issue number8
DOIs
StatePublished - Feb 15 2020

Bibliographical note

Funding Information:
Acknowledgments . This work was partially supported by C-SPIN/STARnet, DARPA ERI FRANC program, and ASCENT/JUMP.

Publisher Copyright:
© 2020 American Physical Society.

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