Bias annealing of doped amorphous silicon

R. A. Street, J. Kakalios

Research output: Contribution to journalLetterpeer-review

30 Scopus citations


Experiments are described which explore the changes in the densities of electrons or holes in doped amorphous silicon when it is annealed with an applied bias. Such bias annealing produces a metastable enhancement of the doping efficiency by altering the distribution of localized states. A model is proposed in which the effects are directly related to the doping mechanism of amorphous silicon.

Original languageEnglish (US)
Pages (from-to)21-26
Number of pages6
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number1
StatePublished - Jul 1986

Bibliographical note

Funding Information:
We are grateful to Z. Smith and M. Stutzmann for helpful discussions, and to R. Thompson, C. C. Tsai and J. Zesch for assistance in sample preparation. The research is supported by the Solar Energy Research Institute.


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