Experiments are described which explore the changes in the densities of electrons or holes in doped amorphous silicon when it is annealed with an applied bias. Such bias annealing produces a metastable enhancement of the doping efficiency by altering the distribution of localized states. A model is proposed in which the effects are directly related to the doping mechanism of amorphous silicon.
|Original language||English (US)|
|Number of pages||6|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - Jul 1986|