Bias annealing of doped amorphous silicon

R. A. Street, J. Kakalios

Research output: Contribution to journalLetterpeer-review

29 Scopus citations

Abstract

Experiments are described which explore the changes in the densities of electrons or holes in doped amorphous silicon when it is annealed with an applied bias. Such bias annealing produces a metastable enhancement of the doping efficiency by altering the distribution of localized states. A model is proposed in which the effects are directly related to the doping mechanism of amorphous silicon.

Original languageEnglish (US)
Pages (from-to)21-26
Number of pages6
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume54
Issue number1
DOIs
StatePublished - Jul 1986

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