Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

Saurabh Kumar Pandey; Sushil Kumar Pandey; Vishnu Awasthi; Ashish Kumar; M. Gupta; V. Sathe; Shaibal Mukherjee

doi:10.1007/s10854-013-1644-x

Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

Saurabh Kumar Pandey, Sushil Kumar Pandey, Vishnu Awasthi, Ashish Kumar, M. Gupta, V. Sathe, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Mg-doped ZnO (MgZnO) films were grown on p-Si (001) substrates by dual ion beam sputtering deposition system at a constant growth temperature of 600 C for different oxygen partial pressure. The impact of oxygen partial pressure on the structural, electrical, elemental and morphological properties was thoroughly investigated. X-ray diffraction (XRD) spectra revealed that the deposited MgZnO films were polycrystalline in nature with preferred (002) crystal orientation. The peak of MgZnO (101) plane was reduced significantly as oxygen partial pressure was increased and disappeared completely at 80 and 100 % O₂. The maximum electron concentration was evaluated to be 5.79 × 10 ¹⁸ cm^-3 with resistivity of 0.116 Ω cm and electron mobility of 9.306 cm²/V s at room temperature, for MgZnO film grown with 20 % O₂. Raman spectra shows a broad peak at 434 cm^-1 corresponded to E ₂ ^high phonons mode of MgZnO wurtzite structure. The peak at 560 cm^-1 corresponded to the E₁ (LO) mode and was associated with oxygen deficiency in MgZnO films. Raman intensity at 560 cm^-1 reduced, on increasing oxygen partial pressure. A correlation between structural, electrical, elemental and morphological properties with oxygen partial pressure was also established.

Original language	English (US)
Pages (from-to)	772-777
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	2
DOIs	https://doi.org/10.1007/s10854-013-1644-x
State	Published - Feb 2014

Bibliographical note

Funding Information:
Scientist No. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) Project Number SR/S3/EECE/0142/2011 and Council of Scientific and Industrial Research (CSIR) Project Number 22(0608)/12/EMR-II. We express our sincere thanks to the Department of Physics and Astrophysics, University of Delhi, Delhi-110007 for Raman studies. We are also grateful for the Atomic Force Microscopy (AFM) Facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.

Funding Information:
Acknowledgments This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young

Funding Information:
M. Gupta · V. Sathe University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India

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title = "Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure",

abstract = "Mg-doped ZnO (MgZnO) films were grown on p-Si (001) substrates by dual ion beam sputtering deposition system at a constant growth temperature of 600 C for different oxygen partial pressure. The impact of oxygen partial pressure on the structural, electrical, elemental and morphological properties was thoroughly investigated. X-ray diffraction (XRD) spectra revealed that the deposited MgZnO films were polycrystalline in nature with preferred (002) crystal orientation. The peak of MgZnO (101) plane was reduced significantly as oxygen partial pressure was increased and disappeared completely at 80 and 100 % O2. The maximum electron concentration was evaluated to be 5.79 × 10 18 cm-3 with resistivity of 0.116 Ω cm and electron mobility of 9.306 cm2/V s at room temperature, for MgZnO film grown with 20 % O2. Raman spectra shows a broad peak at 434 cm-1 corresponded to E 2 high phonons mode of MgZnO wurtzite structure. The peak at 560 cm-1 corresponded to the E1 (LO) mode and was associated with oxygen deficiency in MgZnO films. Raman intensity at 560 cm-1 reduced, on increasing oxygen partial pressure. A correlation between structural, electrical, elemental and morphological properties with oxygen partial pressure was also established.",

author = "Pandey, {Saurabh Kumar} and Pandey, {Sushil Kumar} and Vishnu Awasthi and Ashish Kumar and M. Gupta and V. Sathe and Shaibal Mukherjee",

note = "Funding Information: Scientist No. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) Project Number SR/S3/EECE/0142/2011 and Council of Scientific and Industrial Research (CSIR) Project Number 22(0608)/12/EMR-II. We express our sincere thanks to the Department of Physics and Astrophysics, University of Delhi, Delhi-110007 for Raman studies. We are also grateful for the Atomic Force Microscopy (AFM) Facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore. Funding Information: Acknowledgments This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Funding Information: M. Gupta · V. Sathe University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India",

year = "2014",

month = feb,

doi = "10.1007/s10854-013-1644-x",

language = "English (US)",

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T1 - Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

AU - Pandey, Saurabh Kumar

AU - Pandey, Sushil Kumar

AU - Awasthi, Vishnu

AU - Kumar, Ashish

AU - Gupta, M.

AU - Sathe, V.

AU - Mukherjee, Shaibal

N1 - Funding Information: Scientist No. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) Project Number SR/S3/EECE/0142/2011 and Council of Scientific and Industrial Research (CSIR) Project Number 22(0608)/12/EMR-II. We express our sincere thanks to the Department of Physics and Astrophysics, University of Delhi, Delhi-110007 for Raman studies. We are also grateful for the Atomic Force Microscopy (AFM) Facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore. Funding Information: Acknowledgments This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Funding Information: M. Gupta · V. Sathe University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India

PY - 2014/2

Y1 - 2014/2

N2 - Mg-doped ZnO (MgZnO) films were grown on p-Si (001) substrates by dual ion beam sputtering deposition system at a constant growth temperature of 600 C for different oxygen partial pressure. The impact of oxygen partial pressure on the structural, electrical, elemental and morphological properties was thoroughly investigated. X-ray diffraction (XRD) spectra revealed that the deposited MgZnO films were polycrystalline in nature with preferred (002) crystal orientation. The peak of MgZnO (101) plane was reduced significantly as oxygen partial pressure was increased and disappeared completely at 80 and 100 % O2. The maximum electron concentration was evaluated to be 5.79 × 10 18 cm-3 with resistivity of 0.116 Ω cm and electron mobility of 9.306 cm2/V s at room temperature, for MgZnO film grown with 20 % O2. Raman spectra shows a broad peak at 434 cm-1 corresponded to E 2 high phonons mode of MgZnO wurtzite structure. The peak at 560 cm-1 corresponded to the E1 (LO) mode and was associated with oxygen deficiency in MgZnO films. Raman intensity at 560 cm-1 reduced, on increasing oxygen partial pressure. A correlation between structural, electrical, elemental and morphological properties with oxygen partial pressure was also established.

AB - Mg-doped ZnO (MgZnO) films were grown on p-Si (001) substrates by dual ion beam sputtering deposition system at a constant growth temperature of 600 C for different oxygen partial pressure. The impact of oxygen partial pressure on the structural, electrical, elemental and morphological properties was thoroughly investigated. X-ray diffraction (XRD) spectra revealed that the deposited MgZnO films were polycrystalline in nature with preferred (002) crystal orientation. The peak of MgZnO (101) plane was reduced significantly as oxygen partial pressure was increased and disappeared completely at 80 and 100 % O2. The maximum electron concentration was evaluated to be 5.79 × 10 18 cm-3 with resistivity of 0.116 Ω cm and electron mobility of 9.306 cm2/V s at room temperature, for MgZnO film grown with 20 % O2. Raman spectra shows a broad peak at 434 cm-1 corresponded to E 2 high phonons mode of MgZnO wurtzite structure. The peak at 560 cm-1 corresponded to the E1 (LO) mode and was associated with oxygen deficiency in MgZnO films. Raman intensity at 560 cm-1 reduced, on increasing oxygen partial pressure. A correlation between structural, electrical, elemental and morphological properties with oxygen partial pressure was also established.

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 2

ER -

Behavior of dual ion beam sputtered MgZnO thin films for different oxygen partial pressure

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