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Basic solutions for nanoparticle contamination in EUV-lithography
H. Fissan
, C. Asbach
, J. H. Kim
, S. J. Yook
,
David Y Pui
, T. Van Der Zwaag
, T. Engelke
Mechanical Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
Overview
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Keyphrases
Nanoparticles
100%
Extreme Ultraviolet Lithography
100%
EUV Lithography
100%
Atmospheric Pressure
66%
Low-pressure Condition
33%
Low Pressure
33%
Reticle
33%
Particle Contamination
33%
Semiconductor Industry
33%
Structure Size
33%
Photomask
33%
Contamination Control
33%
Engineering
Nanoparticles
100%
Lithography
100%
Extreme ultraviolet lithography
100%
Atmospheric Pressure
66%
Structure Size
33%
Earth and Planetary Sciences
Atmospheric Pressure
100%
Size Structure
50%
Semiconductor Industry
50%
Photomasks
50%
Material Science
Lithography
100%
Nanoparticle
100%