Barrier tuning in thin PtSi/Si contacts

Yongping Ding, S. A. Campbell

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PtSi/Si contacts were studied as a function of thickness. A change of Schottky barrier height up to 100 mV from its bulk value was detected when PtSi thickness decreased to 6 nm. One explanation is the quantum size effect, generally confirming theoretical predictions. This effect also results in an increase of contact resistance in Ohmic PtSi/p-Si contacts. Furthermore, the nanoscale PtSi thin layer presented a poor electron screen from the outside contact layer of Al. It was found that for PtSi > 50 nm, the contact properties of Al/PtSi/Si is unchanged by the presence of the Al layer.

Original languageEnglish (US)
Article number093508
JournalApplied Physics Letters
Issue number9
StatePublished - 2006

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (DMI-0304211) and was carried out in the Minnesota NanoFabrication Center which is partially supported through the NSF NNIN program.


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