Barrier tuning in thin PtSi/Si contacts

Yongping Ding; S. A. Campbell

doi:10.1063/1.2344847

Barrier tuning in thin PtSi/Si contacts

Yongping Ding, S. A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

PtSi/Si contacts were studied as a function of thickness. A change of Schottky barrier height up to 100 mV from its bulk value was detected when PtSi thickness decreased to 6 nm. One explanation is the quantum size effect, generally confirming theoretical predictions. This effect also results in an increase of contact resistance in Ohmic PtSi/p-Si contacts. Furthermore, the nanoscale PtSi thin layer presented a poor electron screen from the outside contact layer of Al. It was found that for PtSi > 50 nm, the contact properties of Al/PtSi/Si is unchanged by the presence of the Al layer.

Original language	English (US)
Article number	093508
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2344847
State	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation (DMI-0304211) and was carried out in the Minnesota NanoFabrication Center which is partially supported through the NSF NNIN program.

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title = "Barrier tuning in thin PtSi/Si contacts",

abstract = "PtSi/Si contacts were studied as a function of thickness. A change of Schottky barrier height up to 100 mV from its bulk value was detected when PtSi thickness decreased to 6 nm. One explanation is the quantum size effect, generally confirming theoretical predictions. This effect also results in an increase of contact resistance in Ohmic PtSi/p-Si contacts. Furthermore, the nanoscale PtSi thin layer presented a poor electron screen from the outside contact layer of Al. It was found that for PtSi > 50 nm, the contact properties of Al/PtSi/Si is unchanged by the presence of the Al layer.",

author = "Yongping Ding and Campbell, {S. A.}",

note = "Funding Information: This work was supported by the National Science Foundation (DMI-0304211) and was carried out in the Minnesota NanoFabrication Center which is partially supported through the NSF NNIN program.",

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language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Barrier tuning in thin PtSi/Si contacts

AU - Ding, Yongping

AU - Campbell, S. A.

N1 - Funding Information: This work was supported by the National Science Foundation (DMI-0304211) and was carried out in the Minnesota NanoFabrication Center which is partially supported through the NSF NNIN program.

PY - 2006

Y1 - 2006

N2 - PtSi/Si contacts were studied as a function of thickness. A change of Schottky barrier height up to 100 mV from its bulk value was detected when PtSi thickness decreased to 6 nm. One explanation is the quantum size effect, generally confirming theoretical predictions. This effect also results in an increase of contact resistance in Ohmic PtSi/p-Si contacts. Furthermore, the nanoscale PtSi thin layer presented a poor electron screen from the outside contact layer of Al. It was found that for PtSi > 50 nm, the contact properties of Al/PtSi/Si is unchanged by the presence of the Al layer.

AB - PtSi/Si contacts were studied as a function of thickness. A change of Schottky barrier height up to 100 mV from its bulk value was detected when PtSi thickness decreased to 6 nm. One explanation is the quantum size effect, generally confirming theoretical predictions. This effect also results in an increase of contact resistance in Ohmic PtSi/p-Si contacts. Furthermore, the nanoscale PtSi thin layer presented a poor electron screen from the outside contact layer of Al. It was found that for PtSi > 50 nm, the contact properties of Al/PtSi/Si is unchanged by the presence of the Al layer.

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JF - Applied Physics Letters

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ER -

Barrier tuning in thin PtSi/Si contacts

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