Barrier Technology For Dyba2Cu3O7-x Junctions And Related Structures

K. M. Beauchamp, Y. J. Zhang, B. R. Johnson, R. K. Schultz, G. C. Spalding, M. Tsen, T. Wang, J. F. Evans, M. L. Mecartney, A. M. Goldman

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Layered structures which include the high-temperature superconductor DyBa2Cu3O7-x have been fabricated using molecular beam epitaxy with ozone as the activated oxygen source. A c-axis oriented DyBa2Cu3O7-xthin film with a Tc of 74 K has been grown on a layer of the rare earth sesquioxide DY2O3 on a (100) oriented SrTiO3 substrate. DY2O3 has also been incorporated as a barrier between two layers of DyBa2Cu3O7-x where the Tc of the top layer is 89 K. X-ray diffraction reveals oriented growth of both the DyBa2Cu3O7-x and the DY2O3 layers. Cross-sectional transmission electron microscopy clearly shows the detailed matching of the layers, demonstrating that the interfaces are abrupt, with {100} DY2O3 planes parallel to {001} DyBa2Cu3O7-x planes. These results are a strong indication that high quality, all high-Tc superconductor tunneling junctions can be fabricated in this system.

Original languageEnglish (US)
Pages (from-to)3090-3093
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number2
StatePublished - Mar 1991

Bibliographical note

Funding Information:
This work was supported in part by the AFOSR under Grant 87-0372, by the NSF Materials Research Group Program under Grant NSF/DMR-89-08094, by the Minnesota Department of Administration, and by the Central Administration of the University of Minnesota.


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