Keyphrases
MOSFET
100%
Black Phosphorus
100%
Band-to-band Tunneling
100%
Ambipolar Current
100%
Electrostatically Doped
57%
Doped Device
28%
Schottky Contact
28%
Subthreshold Characteristics
28%
High Performance
14%
Transistor
14%
Transport Model
14%
Tunneling
14%
High Mobility
14%
Subthreshold
14%
Drain Bias
14%
Ambipolar
14%
Direct Band Gap
14%
Channel Material
14%
One-dimensional Transport
14%
Carrier Injection
14%
Effective Mass
14%
Ultra-thin Body
14%
Body Thickness
14%
Off-state Leakage Current
14%
Tunable Band Gap
14%
Anisotropic Effective Mass
14%
On-state
14%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Tunnel Construction
100%
Schottky Barrier
66%
Band Gap
66%
One Dimensional
33%
Anisotropic
33%
Drain Bias
33%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Schottky Barrier
66%
Transistor
33%