Band structure characterization of WS2 grown by chemical vapor deposition

Iori Tanabe; Michael Gomez; William C. Coley; Duy Le; Elena M. Echeverria; Gordon Stecklein; Viktor Kandyba; Santosh K. Balijepalli; Velveth Klee; Ariana E. Nguyen; Edwin Preciado; I. Hsi Lu; Sarah Bobek; David Barroso; Dominic Martinez-Ta; Alexei Barinov; Talat S. Rahman; Peter A. Dowben; Paul A. Crowell; Ludwig Bartels

doi:10.1063/1.4954278

Band structure characterization of WS₂ grown by chemical vapor deposition

Iori Tanabe
, Michael Gomez
, William C. Coley
, Duy Le
, Elena M. Echeverria
, Gordon Stecklein
, Viktor Kandyba
, Santosh K. Balijepalli
, Velveth Klee
, Ariana E. Nguyen
, Edwin Preciado
, I. Hsi Lu
, Sarah Bobek
, David Barroso
, Dominic Martinez-Ta
, Alexei Barinov
, Talat S. Rahman
, Peter A. Dowben
, Paul A. Crowell
, Ludwig Bartels

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Growth by chemical vapor deposition (CVD) leads to multilayer WS₂ of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 m_e for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 m_e for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS₂ material.

Original language	English (US)
Article number	252103
Journal	Applied Physics Letters
Volume	108
Issue number	25
DOIs	https://doi.org/10.1063/1.4954278
State	Published - Jun 20 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

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10.1063/1.4954278

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Tanabe, I., Gomez, M., Coley, W. C., Le, D., Echeverria, E. M., Stecklein, G., Kandyba, V., Balijepalli, S. K., Klee, V., Nguyen, A. E., Preciado, E., Lu, I. H., Bobek, S., Barroso, D., Martinez-Ta, D., Barinov, A., Rahman, T. S., Dowben, P. A., Crowell, P. A., & Bartels, L. (2016). Band structure characterization of WS₂ grown by chemical vapor deposition. Applied Physics Letters, 108(25), Article 252103. https://doi.org/10.1063/1.4954278

Tanabe, I, Gomez, M, Coley, WC, Le, D, Echeverria, EM, Stecklein, G, Kandyba, V, Balijepalli, SK, Klee, V, Nguyen, AE, Preciado, E, Lu, IH, Bobek, S, Barroso, D, Martinez-Ta, D, Barinov, A, Rahman, TS, Dowben, PA, Crowell, PA & Bartels, L 2016, 'Band structure characterization of WS₂ grown by chemical vapor deposition', Applied Physics Letters, vol. 108, no. 25, 252103. https://doi.org/10.1063/1.4954278

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title = "Band structure characterization of WS2 grown by chemical vapor deposition",

abstract = "Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the {\=K} point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.",

author = "Iori Tanabe and Michael Gomez and Coley, \{William C.\} and Duy Le and Echeverria, \{Elena M.\} and Gordon Stecklein and Viktor Kandyba and Balijepalli, \{Santosh K.\} and Velveth Klee and Nguyen, \{Ariana E.\} and Edwin Preciado and Lu, \{I. Hsi\} and Sarah Bobek and David Barroso and Dominic Martinez-Ta and Alexei Barinov and Rahman, \{Talat S.\} and Dowben, \{Peter A.\} and Crowell, \{Paul A.\} and Ludwig Bartels",

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doi = "10.1063/1.4954278",

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AU - Tanabe, Iori

AU - Gomez, Michael

AU - Coley, William C.

AU - Le, Duy

AU - Echeverria, Elena M.

AU - Stecklein, Gordon

AU - Kandyba, Viktor

AU - Balijepalli, Santosh K.

AU - Klee, Velveth

AU - Nguyen, Ariana E.

AU - Preciado, Edwin

AU - Lu, I. Hsi

AU - Bobek, Sarah

AU - Barroso, David

AU - Martinez-Ta, Dominic

AU - Barinov, Alexei

AU - Rahman, Talat S.

AU - Dowben, Peter A.

AU - Crowell, Paul A.

AU - Bartels, Ludwig

PY - 2016/6/20

Y1 - 2016/6/20

N2 - Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

AB - Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

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