Band structure characterization of WS2 grown by chemical vapor deposition

Iori Tanabe; Michael Gomez; William C. Coley; Duy Le; Elena M. Echeverria; Gordon Stecklein; Viktor Kandyba; Santosh K. Balijepalli; Velveth Klee; Ariana E. Nguyen; Edwin Preciado; I. Hsi Lu; Sarah Bobek; David Barroso; Dominic Martinez-Ta; Alexei Barinov; Talat S. Rahman; Peter A. Dowben; Paul A. Crowell; Ludwig Bartels

doi:10.1063/1.4954278

Band structure characterization of WS₂ grown by chemical vapor deposition

Iori Tanabe, Michael Gomez, William C. Coley, Duy Le, Elena M. Echeverria, Gordon Stecklein, Viktor Kandyba, Santosh K. Balijepalli, Velveth Klee, Ariana E. Nguyen, Edwin Preciado, I. Hsi Lu, Sarah Bobek, David Barroso, Dominic Martinez-Ta, Alexei Barinov, Talat S. Rahman, Peter A. Dowben, Paul A. Crowell, Ludwig Bartels

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Growth by chemical vapor deposition (CVD) leads to multilayer WS₂ of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 m_e for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 m_e for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS₂ material.

Original language	English (US)
Article number	252103
Journal	Applied Physics Letters
Volume	108
Issue number	25
DOIs	https://doi.org/10.1063/1.4954278
State	Published - Jun 20 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

Publisher link

10.1063/1.4954278

Find It

Find It at U of M Libraries

Cite this

Tanabe, I., Gomez, M., Coley, W. C., Le, D., Echeverria, E. M., Stecklein, G., Kandyba, V., Balijepalli, S. K., Klee, V., Nguyen, A. E., Preciado, E., Lu, I. H., Bobek, S., Barroso, D., Martinez-Ta, D., Barinov, A., Rahman, T. S., Dowben, P. A., Crowell, P. A., & Bartels, L. (2016). Band structure characterization of WS₂ grown by chemical vapor deposition. Applied Physics Letters, 108(25), Article 252103. https://doi.org/10.1063/1.4954278

Tanabe, I, Gomez, M, Coley, WC, Le, D, Echeverria, EM, Stecklein, G, Kandyba, V, Balijepalli, SK, Klee, V, Nguyen, AE, Preciado, E, Lu, IH, Bobek, S, Barroso, D, Martinez-Ta, D, Barinov, A, Rahman, TS, Dowben, PA, Crowell, PA & Bartels, L 2016, 'Band structure characterization of WS₂ grown by chemical vapor deposition', Applied Physics Letters, vol. 108, no. 25, 252103. https://doi.org/10.1063/1.4954278

@article{02bc0a4007664d1fa0a46737b32f5e98,

title = "Band structure characterization of WS2 grown by chemical vapor deposition",

abstract = "Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the {\=K} point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.",

author = "Iori Tanabe and Michael Gomez and Coley, {William C.} and Duy Le and Echeverria, {Elena M.} and Gordon Stecklein and Viktor Kandyba and Balijepalli, {Santosh K.} and Velveth Klee and Nguyen, {Ariana E.} and Edwin Preciado and Lu, {I. Hsi} and Sarah Bobek and David Barroso and Dominic Martinez-Ta and Alexei Barinov and Rahman, {Talat S.} and Dowben, {Peter A.} and Crowell, {Paul A.} and Ludwig Bartels",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = jun,

day = "20",

doi = "10.1063/1.4954278",

language = "English (US)",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Band structure characterization of WS2 grown by chemical vapor deposition

AU - Tanabe, Iori

AU - Gomez, Michael

AU - Coley, William C.

AU - Le, Duy

AU - Echeverria, Elena M.

AU - Stecklein, Gordon

AU - Kandyba, Viktor

AU - Balijepalli, Santosh K.

AU - Klee, Velveth

AU - Nguyen, Ariana E.

AU - Preciado, Edwin

AU - Lu, I. Hsi

AU - Bobek, Sarah

AU - Barroso, David

AU - Martinez-Ta, Dominic

AU - Barinov, Alexei

AU - Rahman, Talat S.

AU - Dowben, Peter A.

AU - Crowell, Paul A.

AU - Bartels, Ludwig

PY - 2016/6/20

Y1 - 2016/6/20

N2 - Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

AB - Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

UR - http://www.scopus.com/inward/record.url?scp=84975889820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975889820&partnerID=8YFLogxK

U2 - 10.1063/1.4954278

DO - 10.1063/1.4954278

M3 - Article

AN - SCOPUS:84975889820

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252103

ER -