Band structure characterization of WS2 grown by chemical vapor deposition

Iori Tanabe, Michael Gomez, William C. Coley, Duy Le, Elena M. Echeverria, Gordon Stecklein, Viktor Kandyba, Santosh K. Balijepalli, Velveth Klee, Ariana E. Nguyen, Edwin Preciado, I. Hsi Lu, Sarah Bobek, David Barroso, Dominic Martinez-Ta, Alexei Barinov, Talat S. Rahman, Peter A. Dowben, Paul A. Crowell, Ludwig Bartels

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Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K̄ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

Original languageEnglish (US)
Article number252103
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 20 2016

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