Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

Deep Jariwala; Vinod K. Sangwan; Dattatray J. Late; James E. Johns; Vinayak P. Dravid; Tobin J. Marks; Lincoln J. Lauhon; Mark C. Hersam

doi:10.1063/1.4803920

Band-like transport in high mobility unencapsulated single-layer MoS ₂ transistors

Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

366 Scopus citations

Abstract

Ultra-thin MoS₂ has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm²/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS₂ on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Original language	English (US)
Article number	173107
Journal	Applied Physics Letters
Volume	102
Issue number	17
DOIs	https://doi.org/10.1063/1.4803920
State	Published - Apr 29 2013

Bibliographical note

Funding Information:
This research was supported by the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1121262). The authors thank B. Myers for assistance with electron beam lithography. D.J.L. would like to thank the Indo-US Science and Technology Forum (IUSSTF) for a postdoctoral fellowship and Professor C. N. R. Rao for helpful discussions. J.E.J. acknowledges an IIN Postdoctoral Fellowship provided by the Northwestern University International Institute for Nanotechnology. This research made use of the NUANCE Center at Northwestern University, which is supported by NSF-NSEC, NSF-MRSEC, Keck Foundation, and the State of Illinois.

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10.1063/1.4803920

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abstract = "Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.",

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AU - Dravid, Vinayak P.

AU - Marks, Tobin J.

AU - Lauhon, Lincoln J.

AU - Hersam, Mark C.

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