Band gap tunable and improved microstructure characteristics of Cu ₂ZnSn(S_1-x,Se_x)₄ thin films by annealing under atmosphere containing S and Se

Keyphrases

• Annealing 100%
• Microstructural Characteristics 100%
• Bandgap Tunability 100%
• Vaporization Temperature 57%
• Stacked Precursor 42%
• SnS2 28%
• CZTS Thin Films 28%
• Two-zone 14%
• Room Temperature 14%
• Chemical Properties 14%
• Optical Properties 14%
• Structural Properties 14%
• X-ray Diffraction Pattern 14%
• Morphological Properties 14%
• Raman Spectroscopy 14%
• UV-VIS Spectroscopy 14%
• X-ray Photoelectron Spectroscopy 14%
• Energy Dispersive X-ray 14%
• Glass Substrate 14%
• Vaporization 14%
• Absorption Coefficient 14%
• Coated Glass 14%
• Optical Energy Gap 14%
• Sputtering Method 14%
• Kesterite 14%
• Stacking Order 14%
• Furnace System 14%

Engineering

• Thin Films 100%
• Band Gap 100%
• Vaporization 55%
• Ray Photoelectron Spectroscopy 11%
• Band Gap Energy 11%
• X-Ray Diffraction Pattern 11%
• Secondary Phase 11%
• Room Temperature 11%
• Crystal Structure 11%
• Absorptivity 11%
• Glass Substrate 11%
• Absorption Coefficient 11%
• Optical band gaps 11%

Material Science

• Annealing 100%
• Thin Films 100%
• Raman Spectroscopy 11%
• X-Ray Diffraction 11%
• Optical Property 11%
• Diffraction Pattern 11%
• Chemical Property 11%
• X-Ray Photoelectron Spectroscopy 11%
• Morphology 11%
• Crystal Structure 11%