Band gap opening in stanene induced by patterned B-N doping

Priyanka Garg, Indrani Choudhuri, Arup Mahata, Biswarup Pathak

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Abstract

Stanene is a quantum spin Hall insulator and a promising material for electronic and optoelectronic devices. Density functional theory (DFT) calculations are performed to study the band gap opening in stanene by elemental mono-doping (B, N) and co-doping (B-N). Different patterned B-N co-doping is studied to change the electronic properties of stanene. A patterned B-N co-doping opens the band gap in stanene and its semiconducting nature persists under strain. Molecular dynamics (MD) simulations are performed to confirm the thermal stability of such a doped system. The stress-strain study indicates that such a doped system is as stable as pure stanene. Our work function calculations show that stanene and doped stanene have a lower work function than graphene and thus are promising materials for photocatalysts and electronic devices.

Original languageEnglish (US)
Pages (from-to)3660-3669
Number of pages10
JournalPhysical Chemistry Chemical Physics
Volume19
Issue number5
DOIs
StatePublished - Jan 1 2017

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