Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface

Vishnu Awasthi; Vivek Garg; Brajendra S. Sengar; Rohit Singh; Sushil Kumar Pandey; Shailendra Kumar; C. Mukherjee; Shaibal Mukherjee

doi:10.1109/ICIPRM.2016.7528636

Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface

Vishnu Awasthi, Vivek Garg, Brajendra S. Sengar, Rohit Singh, Sushil Kumar Pandey, Shailendra Kumar, C. Mukherjee, Shaibal Mukherjee

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg_0.05Zn_0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.

Original language	English (US)
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509019649
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528636
State	Published - Aug 1 2016
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: Jun 26 2016 → Jun 30 2016

Publication series

Name	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other	2016 Compound Semiconductor Week, CSW 2016
Country/Territory	Japan
City	Toyama
Period	6/26/16 → 6/30/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

DIBS
GMZO
GZO
UPS
plasmons
solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Publisher link

10.1109/ICIPRM.2016.7528636

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Awasthi, V., Garg, V., Sengar, B. S., Singh, R., Pandey, S. K., Kumar, S., Mukherjee, C., & Mukherjee, S. (2016). Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 Article 7528636 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528636

Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface. / Awasthi, Vishnu; Garg, Vivek; Sengar, Brajendra S. et al.
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528636 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Awasthi, V, Garg, V, Sengar, BS, Singh, R, Pandey, SK, Kumar, S, Mukherjee, C & Mukherjee, S 2016, Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528636, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 6/26/16. https://doi.org/10.1109/ICIPRM.2016.7528636

Awasthi V, Garg V, Sengar BS, Singh R, Pandey SK, Kumar S et al. Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528636. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). doi: 10.1109/ICIPRM.2016.7528636

Awasthi, Vishnu ; Garg, Vivek ; Sengar, Brajendra S. et al. / Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

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abstract = "A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.",

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AU - Awasthi, Vishnu

AU - Garg, Vivek

AU - Sengar, Brajendra S.

AU - Singh, Rohit

AU - Pandey, Sushil Kumar

AU - Kumar, Shailendra

AU - Mukherjee, C.

AU - Mukherjee, Shaibal

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N2 - A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.

AB - A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.

KW - DIBS

KW - GMZO

KW - GZO

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KW - plasmons

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ER -

Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface

Abstract

Publication series

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Bibliographical note

Keywords

UN SDGs

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