Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission

S. R. Johnson, C. Z. Guo, S. Chaparro, Yu G. Sadofyev, J. Wang, Y. Cao, N. Samal, C. Navarro, J. Xu, S. Q. Yu, D. Ding, Y. H. Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Very thin mixed group-V layers deposited by molecular beam epitaxy (MBE) enable the precise bandgap engineering required to meet the demands of modern devices. In optoelectronic devices it is important to control material gain (wavefunction overlap) in addition to the bandgap. For example, the MBE growth of small bandgap GaAsSb on GaAs has application in 1300 nm datacom lasers. When comparing GaAs1-xSbx and InxGa1-xAs, the bulk material bandgaps are very similar for x<0.5, however, for the same strain levels on the GaAs, much longer emission wavelengths can be reached using GaAsSb. This is attributed to a much smaller conduction band offset for the antimonides and a large bandgap bowing parameter for pseudomorphic GaAsSb on GaAs. Furthermore, the conduction band offset is reported to be type-II for large Sb compositions, allowing access to still longer wavelengths. The cost of achieving longer wavelengths through type-II band alignments is a reduction in material gain due to poor electron confinement. Therefore the band alignment must be carefully considered when engineering active materials for optoelectronic devices.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages197-198
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period9/15/029/20/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

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