Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

Scott A. Chambers; Tiffany C. Kaspar; Abhinav Prakash; Greg Haugstad; Bharat Jalan

doi:10.1063/1.4946762

Band alignment at epitaxial BaSnO₃/SrTiO₃(001) and BaSnO₃/LaAlO₃(001) heterojunctions

Scott A. Chambers, Tiffany C. Kaspar, Abhinav Prakash, Greg Haugstad, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO₃ with SrTiO₃(001) and LaAlO₃(001). 28 u.c. BaSnO₃ epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO₃ films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO₃ than in SrTiO₃ and LaAlO₃ by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO₃ by modulation doping, or at the BaSnO₃/LaAlO₃ interface by polarization doping, can be transferred to and at least partially confined in the BaSnO₃ film.

Original language	English (US)
Article number	152104
Journal	Applied Physics Letters
Volume	108
Issue number	15
DOIs	https://doi.org/10.1063/1.4946762
State	Published - Apr 11 2016

Bibliographical note

Funding Information:
The thin film growth and characterization work at the University of Minnesota was supported primarily by the National Science Foundation through DMR-1410888 and, in part, by the MRSEC under Award No. # DMR-1420013. We also acknowledge use of facilities at the UMN Minnesota Nano Center. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. The XPS and SE work at PNNL was supported by the U.S. Department of Energy, Office of Science, Division of Materials Sciences and Engineering under Award No. #10122. The PNNL work was performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at PNNL.

Publisher Copyright:
© 2016 Author(s).

MRSEC Support

Partial

Publisher link

10.1063/1.4946762

Find It

Find It at U of M Libraries

Cite this

@article{817f429727b948c1839645f57ad87f41,

title = "Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions",

abstract = "We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO3 with SrTiO3(001) and LaAlO3(001). 28 u.c. BaSnO3 epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO3 than in SrTiO3 and LaAlO3 by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO3 by modulation doping, or at the BaSnO3/LaAlO3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO3 film.",

author = "Chambers, {Scott A.} and Kaspar, {Tiffany C.} and Abhinav Prakash and Greg Haugstad and Bharat Jalan",

note = "Funding Information: The thin film growth and characterization work at the University of Minnesota was supported primarily by the National Science Foundation through DMR-1410888 and, in part, by the MRSEC under Award No. # DMR-1420013. We also acknowledge use of facilities at the UMN Minnesota Nano Center. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. The XPS and SE work at PNNL was supported by the U.S. Department of Energy, Office of Science, Division of Materials Sciences and Engineering under Award No. #10122. The PNNL work was performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at PNNL. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = apr,

day = "11",

doi = "10.1063/1.4946762",

language = "English (US)",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

AU - Chambers, Scott A.

AU - Kaspar, Tiffany C.

AU - Prakash, Abhinav

AU - Haugstad, Greg

AU - Jalan, Bharat

N1 - Funding Information: The thin film growth and characterization work at the University of Minnesota was supported primarily by the National Science Foundation through DMR-1410888 and, in part, by the MRSEC under Award No. # DMR-1420013. We also acknowledge use of facilities at the UMN Minnesota Nano Center. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. The XPS and SE work at PNNL was supported by the U.S. Department of Energy, Office of Science, Division of Materials Sciences and Engineering under Award No. #10122. The PNNL work was performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at PNNL. Publisher Copyright: © 2016 Author(s).

PY - 2016/4/11

Y1 - 2016/4/11

N2 - We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO3 with SrTiO3(001) and LaAlO3(001). 28 u.c. BaSnO3 epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO3 than in SrTiO3 and LaAlO3 by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO3 by modulation doping, or at the BaSnO3/LaAlO3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO3 film.

AB - We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO3 with SrTiO3(001) and LaAlO3(001). 28 u.c. BaSnO3 epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO3 than in SrTiO3 and LaAlO3 by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO3 by modulation doping, or at the BaSnO3/LaAlO3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO3 film.

UR - http://www.scopus.com/inward/record.url?scp=84964510419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964510419&partnerID=8YFLogxK

U2 - 10.1063/1.4946762

DO - 10.1063/1.4946762

M3 - Article

AN - SCOPUS:84964510419

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152104

ER -

Band alignment at epitaxial BaSnO₃/SrTiO₃(001) and BaSnO₃/LaAlO₃(001) heterojunctions

Abstract

Bibliographical note

MRSEC Support

Publisher link

Find It

Other files and links

Fingerprint

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

Abstract

Bibliographical note

MRSEC Support

Publisher link

Find It

Other files and links

Fingerprint

Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Band alignment at epitaxial BaSnO₃/SrTiO₃(001) and BaSnO₃/LaAlO₃(001) heterojunctions