A low-pressure chemical vapor deposition (CVD) reactor was modified to produce compositional spreads of TiO 2 /HfO 2 /SnO 2 and ZrO 2 /HfO 2 /SnO 2 on a single Si(1 0 0) wafer. Use of anhydrous metal nitrates as single-source precursors allowed the deposition kinetics to be matched. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer, an array of capacitors each with a dimension of 100 μ × 100 μ was used to map the effective dielectric constant of the films. The dielectric constant reached a maximum in the regions with the high TiO 2 or ZrO 2 content. A unique crystalline phase having the orthorhombic α-PbO 2 structure was detected in the films grown at or above 450 °C.
|Original language||English (US)|
|Number of pages||6|
|Journal||Applied Surface Science|
|State||Published - Feb 15 2004|
Bibliographical noteFunding Information:
This research was supported by a grant from the National Science Foundation (CHE-0076141).
Copyright 2019 Elsevier B.V., All rights reserved.
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