Balancing reactor fluid dynamics and deposition kinetics to achieve compositional variation in combinatorial chemical vapor depositions

Bin Xia; Ryan C. Smith; Tyler L. Moersch; Wayne L. Gladfelter

doi:10.1016/S0169-4332(03)00901-2

Balancing reactor fluid dynamics and deposition kinetics to achieve compositional variation in combinatorial chemical vapor depositions

Bin Xia, Ryan C. Smith, Tyler L. Moersch, Wayne L. Gladfelter

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A low-pressure chemical vapor deposition (CVD) reactor was modified to produce compositional spreads of TiO ₂ /HfO ₂ /SnO ₂ and ZrO ₂ /HfO ₂ /SnO ₂ on a single Si(1 0 0) wafer. Use of anhydrous metal nitrates as single-source precursors allowed the deposition kinetics to be matched. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer, an array of capacitors each with a dimension of 100 μ × 100 μ was used to map the effective dielectric constant of the films. The dielectric constant reached a maximum in the regions with the high TiO ₂ or ZrO ₂ content. A unique crystalline phase having the orthorhombic α-PbO ₂ structure was detected in the films grown at or above 450 °C.

Original language	English (US)
Pages (from-to)	14-19
Number of pages	6
Journal	Applied Surface Science
Volume	223
Issue number	1-3
DOIs	https://doi.org/10.1016/S0169-4332(03)00901-2
State	Published - Feb 15 2004

Bibliographical note

Funding Information:
This research was supported by a grant from the National Science Foundation (CHE-0076141).

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

CVD
Combinatorial
Dielectric
Fluid dynamics
Metal oxide

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10.1016/S0169-4332(03)00901-2

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title = "Balancing reactor fluid dynamics and deposition kinetics to achieve compositional variation in combinatorial chemical vapor depositions",

abstract = " A low-pressure chemical vapor deposition (CVD) reactor was modified to produce compositional spreads of TiO 2 /HfO 2 /SnO 2 and ZrO 2 /HfO 2 /SnO 2 on a single Si(1 0 0) wafer. Use of anhydrous metal nitrates as single-source precursors allowed the deposition kinetics to be matched. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer, an array of capacitors each with a dimension of 100 μ × 100 μ was used to map the effective dielectric constant of the films. The dielectric constant reached a maximum in the regions with the high TiO 2 or ZrO 2 content. A unique crystalline phase having the orthorhombic α-PbO 2 structure was detected in the films grown at or above 450 °C.",

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AU - Xia, Bin

AU - Smith, Ryan C.

AU - Moersch, Tyler L.

AU - Gladfelter, Wayne L.

PY - 2004/2/15

Y1 - 2004/2/15

N2 - A low-pressure chemical vapor deposition (CVD) reactor was modified to produce compositional spreads of TiO 2 /HfO 2 /SnO 2 and ZrO 2 /HfO 2 /SnO 2 on a single Si(1 0 0) wafer. Use of anhydrous metal nitrates as single-source precursors allowed the deposition kinetics to be matched. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer, an array of capacitors each with a dimension of 100 μ × 100 μ was used to map the effective dielectric constant of the films. The dielectric constant reached a maximum in the regions with the high TiO 2 or ZrO 2 content. A unique crystalline phase having the orthorhombic α-PbO 2 structure was detected in the films grown at or above 450 °C.

AB - A low-pressure chemical vapor deposition (CVD) reactor was modified to produce compositional spreads of TiO 2 /HfO 2 /SnO 2 and ZrO 2 /HfO 2 /SnO 2 on a single Si(1 0 0) wafer. Use of anhydrous metal nitrates as single-source precursors allowed the deposition kinetics to be matched. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer, an array of capacitors each with a dimension of 100 μ × 100 μ was used to map the effective dielectric constant of the films. The dielectric constant reached a maximum in the regions with the high TiO 2 or ZrO 2 content. A unique crystalline phase having the orthorhombic α-PbO 2 structure was detected in the films grown at or above 450 °C.

KW - CVD

KW - Combinatorial

KW - Dielectric

KW - Fluid dynamics

KW - Metal oxide

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Balancing reactor fluid dynamics and deposition kinetics to achieve compositional variation in combinatorial chemical vapor depositions

Abstract

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